设计了一种并联双结(DPJ)单晶硅太阳电池, 该电池在同一个单晶硅太阳电池内形成一个PN结和一个NP结, 分别吸收短波能量与长波能量。两个结共用一个N型区, 通过N型区形成并联结构。DPJ太阳电池的短路电流比传统单晶硅太阳电池的短路电流提高约11.9%, 电池的开路电压基本保持不变。研究了DPJ太阳电池的最佳工艺条件, 结果显示: 随着深结和浅结扩散浓度的增加, 电池的光谱响应强度均先增加后减小; 深结扩散完成后, 随着杂质再分布扩散温度的提高和扩散时间的增加, 电池的光谱响应强度先增加后基本保持不变; 随着浅结扩散时间和温度的增加, 电池的光谱响应强度有微弱增加。

A double parallel junctions (DPJ) silicon solar cell structure is designed. The solar cell forms a PN junction and a NP junction in the same monocrystalline silicon solar cell, respectively, which absorbs short wave energy and long wave energy. The two junctions share a N-type region and form a parallel structure by the N-type region. The short circuit current of the solar cells is increased about 11.9% compared with the traditional monocrystalline silicon solar cells, and the open circuit voltage of the solar cells keeps constant. The optimal technological condition of DPJ solar cells is studied, and the results show that the spectrum response of the solar cells enhances firstly, and then decreases with the increasing of diffusion concentration for deep junction and shallow junction. The spectrum response of the solar cells increases firstly, then remains unchanged with the redistribution diffusion temperature raising and the diffusion time extending of the impurities after the diffusion of deep junction is completed. The spectrum response of the solar cells increases slightly with the increase of shallow junction diffusion time and temperature.