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Strip-loaded waveguide-based optical phase shifter for high-efficiency silicon optical modulators

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Abstract

We propose a novel silicon optical phase shifter structure based on heterogeneous strip-loaded waveguides on a photonic silicon on insulator (SOI) platform. The features of an etchless SOI layer and loaded strip would enhance the performance and uniformity of silicon optical modulators on a large-scale wafer. We implemented the phase shifter by loading an amorphous silicon strip onto an SOI layer with a vertical PN diode structure. Compared to the conventional lateral PN phase shifter based on half-etched rib waveguides, this phase shifter shows a >1.5 times enhancement of modulation efficiency and provides >20 GHz high-speed operation.

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DOI:10.1364/prj.4.000222

收稿日期:2016-07-12

修改稿日期:2016-09-01

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Yuriko Maegami:National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Guangwei Cong:National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Morifumi Ohno:National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Makoto Okano:National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Koji Yamada:National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

联系人作者:Yuriko Maegami(yuriko-maegami@aist.go.jp)

【1】L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high-speed applications,” Electron. Lett. 43, 1196–1197 (2007).

【2】J. Fujikata, S. Takahashi, M. Takahashi, M. Noguchi, T. Nakamura, and Y. Arakawa, “High-performance MOS-capacitortype Si optical modulator and surface-illumination-type Ge photodetector for optical interconnection,” Jpn. J. Appl. Phys 55, 04EC01 (2016).

【3】F. Gan and F. X. K?rtner, “High-speed silicon electrooptic modulator design,” IEEE Photon. Technol. Lett. 17, 1007–1009 (2005).

【4】G.-R. Zhou, M. W. Geis, S. J. Spector, F. Gan, M. E. Grein, R. T. Schulein, J. S. Orcutt, J. U. Yoon, D. M. Lennon, T. M. Lyszczarz,E. P. Ippen, and F. X. K?rtner, “Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators,” Opt. Express 16, 5218–5226 (2008).

【5】S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forwardbiased pin diode,” Opt. Express 20, 2911–2923 (2012).

【6】M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach-Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron. 16, 159–164 (2010).

【7】D. Marris-Morini, L. Vivien, J. M. Fédéli, E. Cassan, P. Lyan, and S. Laval, “Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure,” Opt. Express 16, 334–339 (2008).

【8】N. N. Feng, S. Liao, D. Feng, P. Dong, D. Zheng, H. Liang, R. Shafiiha, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High speed carrier-depletion modulators with 1.4 V-cm VπL integrated on 0.25 μm silicon-on-insulator waveguides,” Opt. Express 18, 7994–7999 (2010).

【9】K. Ogawa, K. Goi, Y. T. Tan, T.-Y. Liow, X. Tu, Q. Fang, G.-Q. Lo, and D.-L. Kwong, “Silicon Mach-Zehnder modulator of extinction ratio beyond 10 dB at 10.0–12.5 Gbps,” Opt. Express 19, B26–B31 (2011).

【10】G. Kim, J. W. Park, I. G. Kim, S. Kim, S. Kim, J. M. Lee, G. S. Park, J. Joo, K. S. Jang, J. H. Oh, S. A. Kim, J. H. Kim, J. Y. Lee, J. M. Park, D. W. Kim, D. K. Jeong, M. S. Hwang, J. K. Kim, K. S. Park, H. K. Chi, H. C. Kim, D. W. Kim, and M. H. Cho, “Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s,” Opt. Express 19, 26936–26947 (2011).

【11】T. Baehr-Jones, R. Ding, Y. Liu, A. Ayazi, T. Pinguet, N. C. Harris, M. Streshinsky, P. Lee, Y. Zhang, A. E.-J. Lim, T.-Y. Liow, S. H.-G. Teo, G.-Q. Lo, and M. Hochberg, “Ultralow drive voltage silicon traveling-wave modulator,” Opt. Express 20, 12014–12020 (2012).

【12】K. Goi, K. Oda, H. Kusaka, Y. Terada, K. Ogawa, T.-Y. Liow, X. Tu, G.-Q. Lo, and D.-L. Kwong, “11-Gb/s 80-km transmission performance of zero-chirp silicon Mach-Zehnder modulator,” Opt. Express 20, B350–B356 (2012).

【13】D. Petousi, L. Zimmermann, K. Voigt, and K. Petermann, “Performance limits of depletion-type silicon Mach–Zehnder modulators for telecom applications,” J. Lightwave Technol. 31, 3556–3562 (2013).

【14】H. Xu, X. Xiao, X. Li, Y. Hu, Z. Li, T. Chu, Y. Yu, and J. Yu, “High speed silicon Mach-Zehnder modulator based on interleaved PN junctions,” Opt. Express 20, 15093–15099 (2012).

【15】H. Yu, M. Pantouvaki, J. V. Campenhout, D. Korn, K. Komorowska, P. Dumon, Y. Li, P. Verheyen, P. Absil, L. Alloatti, D. Hillerkuss, J. Leuthold, R. Baets, and W. Bogaerts, “Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators,”
Opt. Express 20, 12926–12938 (2012).

【16】G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y. Hu, D. J. Thomson, K. Li, P. R. Wilson, S.-W. Chen, and S. S. Hsu, “Recent breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics 3, 229–245 (2014).

【17】FIMMWAVE/FIMMPROP, Photon Design Ltd., http://www.photond.com.

【18】https://www.lumerical.com/tcad-products/device/

【19】https://www.lumerical.com/tcad-products/mode/

【20】K. Furuya, K. Nakanishi, R. Takei, E. Omoda, M. Suzuki, M. Okano, T. Kamei, M. Mori, and Y. Sakakibara, “Nanometer-scale thickness control of amorphous silicon using isotropic wetetching and low loss wire waveguide fabrication with the etched material,” Appl. Phys. Lett. 100, 251108 (2012).

【21】R. Takei, S. Manako, E. Omoda, Y. Sakakibara, M. Mori, and T. Kame, “Sub-1 dB/cm submicrometer-scale amorphous silicon waveguide for backend on-chip optical interconnect,” Opt. Express 22, 4779–4788 (2014).

引用该论文

Yuriko Maegami, Guangwei Cong, Morifumi Ohno, Makoto Okano, and Koji Yamada, "Strip-loaded waveguide-based optical phase shifter for high-efficiency silicon optical modulators," Photonics Research 4(6), 222-226 (2016)

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