Photonics Research, 2017, 5 (2): 020000A7, Published Online: Sep. 26, 2018
Carrier localization in InGaN by composition fluctuations: implication to the “green gap” Download: 858次
Optoelectronics Semiconductor materials Light-emitting diodes Quantum-well, -wire and -dot devices Luminescence
Abstract
A simple semi-empirical model for radiative and Auger recombination constants is suggested, accounting for hole localization by composition fluctuations in InGaN alloys. Strengthening of fluctuation with the indium molar fraction in InGaN is found to be largely responsible for decreases in both the radiative and Auger recombination constants with emission wavelength. The model provides good fitting of the experimental spectral dependencies of the recombination constants, thus demonstrating implication of the carrier localization to light-emitting diode efficiency reduction in the “green gap.”
Sergey Yu. Karpov. Carrier localization in InGaN by composition fluctuations: implication to the “green gap”[J]. Photonics Research, 2017, 5(2): 020000A7.