激光与光电子学进展, 2017, 54 (5): 052302, 网络出版: 2017-05-03  

AlGaInP发光二极管老化性能研究 下载: 507次

Study on Aging Properties of AlGaInP Light Emitting Diode
作者单位
三安光电科技有限公司, 福建 厦门 361009
摘要
采用金属有机化学气相沉积系统外延AlGaInP发光二极管, 制备成面积小于12 mil×12 mil(300 μm×300 μm, 1 mil=25.4 μm)的芯片, 封装成裸晶结构并在50 mA、50 ℃加速应力环境下进行1008 h老化寿命实验, 研究外延结构中不同掺杂浓度的分布式布拉格反射镜(DBR)及分段掺杂P型层对小尺寸芯片老化性能的影响。结果表明:随着芯片尺寸缩小, 光衰幅度变大, 当芯片尺寸小于9 mil×9 mil(225 μm×225 μm)时, 通过提升DBR的掺杂浓度可以明显降低光衰幅度; 降低与过渡层相邻的P-Al0.5In0.5P薄层的掺杂浓度, 形成分段掺杂P型层, 通过降低第二段P-Al0.5In0.5P薄层的掺杂浓度, 可以进一步提升老化性能。尺寸为6 mil×6 mil(150 μm×150 μm)的芯片在50 mA、50 ℃环境下老化1008 h, 其光衰幅度可控制在-6%以内。
Abstract
A chip with an area of less than 12 mil×12 mil (300 μm×300 μm, 1 mil=25.4 μm) is fabricated using a metal organic chemical vapor deposition system epitaxial AlGaInP light emitting diode. The chip is packaged in a bare crystal structure and accelerated at 50 mA, 50 ℃ condition for 1008 h aging experiment. The purpose of the experiment is to investigate the effects of distributed Bragg reflectors (DBR) and segmented doped P-type layers on the aging properties of small-sized chips with different doping concentrations in epitaxial structures. Results show that as the chip size shrinks, the light attenuation becomes larger. Increasing DBR doping concentration can significantly reduce the light attenuation when the chip size is less than 9 mil×9 mil (225 μm×225 μm). In addition, segmented doped P-cladding are prepared by reducing the doping concentration between the P-Al0.5In0.5P layer and transition layer, and reducing the second P-Al0.5In0.5P doping concentration can further enhance the aging properties. The light attenuation can be controlled within -6% for the aging experiment under the 50 mA constant current at 50 ℃ to 1008 h with chip size of 6 mil×6 mil (150 μm×150 μm).

郑元宇. AlGaInP发光二极管老化性能研究[J]. 激光与光电子学进展, 2017, 54(5): 052302. Zheng Yuanyu. Study on Aging Properties of AlGaInP Light Emitting Diode[J]. Laser & Optoelectronics Progress, 2017, 54(5): 052302.

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