采用磁控溅射法分别制备了不同组分的Mn-Co-Ni-O(MCNO)薄膜材料.通过对材料结构分析, 发现在Mn离子数目不变的情况下, 随着Co离子的增加, 晶粒尺寸逐渐增大, 且晶格常数先增大后减小; 在Co离子数目不变的情况下, 随着Mn离子的增加, 薄膜的择优生长晶面由(311)不晶面向(400)晶面转变.对电学性能测试进行分析, 可知薄膜材料既有Mn离子的导电机制, 也有Co离子的导电机制; Mn1.2Co1.5Ni0.3O4具有最低的电阻率(235 Ω·cm), 具有最高的室温负温度电阻系数︱α295︱(4.7%·K-1)值.

Thin films of Mn-Co-Ni-O (MCNO) with different cation ratios were deposited by the magnetron sputtering method. By analyzing the material structure, it can be found that the grain size grows gradually with increasing Co cation number with constant Mn cation number, while the lattice parameter grows first and then decreases. The preferential orientation of thin films changes from (311) plane to (400) plane with increasing Mn cation number and the properties of thin films are unstable when the Co cation number is constant. The electrical properties show that both of Mn cations and Co cations participate in the conductivity, and Mn1.2Co1.5Ni0.3O4 has the lowest resistivity (235 Ω·cm) as well as the highest negative temperature coefficient of resistance (NTCR) |α295| (47%·K-1) at room temperature.