电磁脉冲作用于屏蔽腔内的微带线电路的过程十分复杂。目前已有的研究存在局限，缺少将场分析与电路分析结合起来的研究方法。通过一个混合模拟方法计算了电磁脉冲辐照下的含屏蔽腔的微带线电路上的耦合电压。该方法通过建立腔体与微带线的电磁拓扑模型，利用 BLT方程计算得到电磁脉冲在微带线上的耦合电压，结果表明电场强度为 1 000 V/m的电磁脉冲会在微带线终端产生 1.5 V左右的耦合电压。通过电路仿真软件仿真计算了外辐射场对电路工作状态造成的影响，外辐射场在 300 V/m时会影响信号放大电路的正常工作。

The coupled process between Electromagnetic Pulse(EMP) and Printed Circuit Boards (PCB) circuit in a shielding cavity is very complicated. At present, the existing studies have some limitations, namely lacking effective method which can combine the field analysis with circuit analysis. The coupled voltage is simulated on a microstrip line circuit within a shielding cavity by using a hybrid simulation method. Using electromagnetic topology model and Baum-Liu-Tesche(BLT) equation, this method calculates the coupled voltage caused by the EMP. The results show that the coupled voltage is about 1.5 V when the strength of the EMP reaches1 000 V/m. The effects on the PCB circuits caused by the incident EMP are calculated and simulated using the circuit simulation software. The signal-amplified circuit cannot run normally when the strength of EMP is up to 300 V/m.