激光与光电子学进展, 2017, 54 (7): 070005, 网络出版: 2017-07-05
量子点发光二极管界面调控研究进展 下载: 606次
Progress on Interfacial Control of Quantum Dot Light-Emitting Diodes
光学器件 量子点 发光二极管 界面调控 界面层 optical devices quantum dots light-emitting diodes interfacial control interface layer
摘要
在量子点发光二极管(QLED)中,由于电荷传输层材料能带和迁移率的差异,不可避免地存在电荷注入不平衡的问题。为了制备电荷注入尽可能平衡的高性能QLED,通常利用界面调控。结合QLED的结构,分别从阳极界面调控、阴极界面调控和两相界面调控三个方面综述了近年来QLED界面调控的研究进展,分析了界面调控机理及其对QLED性能的影响。指出了QLED目前存在的问题,并展望了其未来的发展趋势。
Abstract
Due to the difference in energy band and mobility of material in the charge transfer layers of the quantum dot light-emitting diode (QLED), the unbalanced charge injection inevitably occurs. In order to fabricate a high-performance QLED with the most balanced charge injection, the interfacial control is commonly used. Combined with the QLED structures, the recent research progress on the QLED interfacial control for anodes, cathodes, and two-phase interfaces is reviewed. The interfacial control mechanisms and the effects of the interfacial control on the QLED performance are discussed. Challenges and trends in the development of QLED are presented.
顾伟, 皮孝东, 杨德仁. 量子点发光二极管界面调控研究进展[J]. 激光与光电子学进展, 2017, 54(7): 070005. Gu Wei, Pi Xiaodong, Yang Deren. Progress on Interfacial Control of Quantum Dot Light-Emitting Diodes[J]. Laser & Optoelectronics Progress, 2017, 54(7): 070005.