光散射学报, 2017, 29 (2): 187, 网络出版: 2017-07-05
SOI基3C-SiC薄膜的光谱表征
Spectral Characterization of 3C-SiC Film Grown on SOI Substrate
立方碳化硅 碳化 反向外延 cubic silicon carbide silicon-on-insulator SOI SiCOI SiC-on-insulator carbonization reverse-epitaxial growth process
摘要
本文探索在SOI基片上通过顶层Si直接与碳源反应,反向外延生长3C-SiC薄膜的工艺条件和技术。采用LPCVD技术,以CH4和H2混合气体为反应源,在SOI衬底上生长3C-SiC薄膜。采用X射线衍射分析仪、场发射扫描电子显微镜和傅里叶红外光谱来研究样品的结构和性质; 并研究反应前、后样品电压-电容特性的变化。研究结果表明,通过反向外延的方法,能够在SOI基片反向外延生长得到3C-SiC薄膜,但目前的工艺条件有待进一步的改善。
Abstract
This paper is to explore process conditions and technology of the reverse epitaxial growth of 3C-SiC thin film through the reaction between the top silicon of the substrate and carbon source.3C-SiC film was grown on SOI substrate by Low Pressure Chemical Vapor Deposition(LPCVD)with CH4 and H2 gas mixture as reaction sources.Using various techniques,including X-ray diffraction(XRD),scanning electron microscope(SEM)and Fourier transform infrared(FTIR)reflectance to study the structure,properties and voltage capacitance characteristics of SOI and 3C-SiCOI samples,it’s found out that 3C-SiC film can be obtained through reverse epitaxial growth method and the current process conditions need to be further improved.
王飞, 杨治美, 马瑶, 龚敏. SOI基3C-SiC薄膜的光谱表征[J]. 光散射学报, 2017, 29(2): 187. WANG Fei, YANG Zhimei, MA Yao, GONG Min. Spectral Characterization of 3C-SiC Film Grown on SOI Substrate[J]. The Journal of Light Scattering, 2017, 29(2): 187.