Ultrashort laser pulses are used to create surface structures on thin ($25~\unicode[STIX]{x03BC}\text{m}$) silicon (Si) wafers. Scanning the wafer with a galvanometric mirror system creates large homogeneously structured areas. The variety of structure shapes that can be generated with this method is exemplified by the analysis of shape, height and distance of structures created in the ambient media air and isopropanol. A study of the correlation between structure height and remaining wafer thickness is presented. The comparatively easy manufacturing technique and the structure variety that allows for custom-tailored targets show great potential for high repetition rate ion acceleration experiments.