采用真空电子束蒸发技术及后续热氧化技术,在玻璃基底上制备了不同厚度的金属铜薄膜。采用X射线衍射、X射线光电子能谱分别表征了所制备的金属铜薄膜的晶体结构和元素组成。采用紫外-可见-近红外分光光度计及拉曼光谱仪分别分析了所制备的金属铜薄膜的吸收谱和表面增强拉曼光谱(SERS)活性。随着膜厚的增加,退火后的薄膜样品由非晶态转变为(111)面择优生长的多晶态,且其吸收边发生红移。当退火温度为200 ℃、退火时间为60 min时,能够获得单一相的纳米氧化亚铜(Cu₂O)薄膜。薄膜样品SERS活性随纳米Cu₂O薄膜吸光度的增大而增强。

A series of copper thin films with different thicknesses are fabricated on glass substrates by vacuum electron beam evaporation technology and subsequent thermal oxidation technology. The crystal structure and element compositions of these copper thin films are characterized by X-ray diffraction and X-ray photoelectron spectroscopy, respectively. The absorption spectra and surface enhanced Raman spectroscopy (SERS) activity of these copper thin films are analyzed by using UV-Vis-IR spectroscopy and Raman spectrometer, respectively. With the increase of film thickness, the amorphous state of the annealed thin film samples changes to a polycrystalline state with a preferred orientation in the (111) plane, and the red-shift of absorption edge appears. The single-phase nano-Cu2O thin films are obtained when the annealing temperature is 200 ℃ and the annealing time is 60 min. The SERS activity increases with the increase of light absorbance of the nano-Cu2O thin films.