Chinese Optics Letters, 2017, 15 (10): 102301, Published Online: Jul. 19, 2018  

Quantum dot quantum cascade photodetector using a laser structure Download: 888次

Author Affiliations
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
Abstract
We report on a quantum dot quantum cascade detector (QD-QCD), whose structure is derived from a QD cascade laser. In this structure, more ordered InAs QD layers formed in the Stranski–Krastanow growth mode on a thin GaAs buffer layer are incorporated into the active region. This QD-QCD can operate up to room temperature with a peak detection wavelength of 5.8 μm. A responsivity of 3.1 mA/W at 160 K and a detectivity of 3.6 × 108 Jones at 77 K are obtained. The initial performance of the detector is promising, and, by further optimizing the growth of InAs QDs, integrated QD-quantum cascade laser/QCD applications are expected.

Fengjiao Wang, Ning Zhuo, Shuman Liu, Fei Ren, Shenqiang Zhai, Junqi Liu, Jinchuan Zhang, Fengqi Liu, Zhanguo Wang. Quantum dot quantum cascade photodetector using a laser structure[J]. Chinese Optics Letters, 2017, 15(10): 102301.

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