半导体光电, 2017, 38 (4): 536, 网络出版: 2017-08-30
肖特基势垒反向隧穿电流的计算模型与特征分析
Calculation Models and Feature Analysis of Schottky Barrier Reverse Tunneling Current
摘要
运用数值计算方法分析了肖特基势垒反向隧穿电流的场发射(FE)、热场发射(TFE)以及基于WKB近似的积分计算模型等三种模型之间的关系, 阐述了场发射与热场发射模型的不足。通过分析积分计算模型的数值计算结果, 探讨了肖特基势垒反向隧穿电流随能量峰状分布的基本特征。
Abstract
In this paper, the relationship among three calculation models of the Schottky barrier reverse tunneling current, that is, the field emission, thermal field emission and the integral calculation model based on WKB approximation is analyzed by using the method of numerical calculation. The shortage of field emission and thermal field emission model is elaborated. Through the analysis of the calculation results of integral calculation model, the features of the Schottky reverse tunneling current distribution with the electron energy are discussed.
雷勇, 饶伟锋, 苏静, 杨翠红. 肖特基势垒反向隧穿电流的计算模型与特征分析[J]. 半导体光电, 2017, 38(4): 536. LEI Yong, RAO Weifeng, SU Jing, YANG Cuihong. Calculation Models and Feature Analysis of Schottky Barrier Reverse Tunneling Current[J]. Semiconductor Optoelectronics, 2017, 38(4): 536.