半导体光电, 2017, 38 (4): 562, 网络出版: 2017-08-30
10Gb/s光接收机跨阻前置放大器芯片设计研究
Study on Design of the Transimpedance Preamplifier Chip for 10Gb/s Optical Receiver
跨阻放大器 光接收机 等效输入噪声电流谱密度 BiCMOS工艺 transimpedance amplifier optical receiver equivalent input current noise spectral density BiCMOS technology
摘要
采用0.18μm BiCMOS工艺设计并实现了一种高增益、低噪声、宽带宽以及大输入动态范围的光接收机跨阻前置放大器。在寄生电容为250fF的情况下, 采用全集成的四级放大电路, 合理实现了上述各项参数指标间的折中。测试结果表明: 放大器单端跨阻增益为73dB, -3dB带宽为7.6GHz, 灵敏度低至-20.44dBm, 功耗为74mW, 最大差分输出电压为200mV, 最大输入饱和光电流峰-峰值为1mA, 等效输入噪声为17.1pA/Hz, 芯片面积为800μm×950μm。
Abstract
A high gain, low noise, wide bandwidth and large input dynamic range transimpedance amplifier was designed and implemented by using 0.18μm BiCMOS technology. With a parasitic capacitance of 250fF, the main amplifying circuit, two-stage differential amplifier circuit and output buffer circuit structure were used to realize the good tradeoff between gain, bandwidth, noise and dynamic range. The testing results indicated that the single end transimpedance gain was 73dB, the -3dB bandwidth was 7.6GHz, the sensitivity was as low as -20.44dBm and power consumption was 74mW. The maximum differential output voltage was 200mV, the maximum input saturated photocurrent 1mA, the equivalent input noise was 17.1pA/Hz and the die size was as small as 800μm×950μm.
李久, 何进, 童志强, 黄启俊, 常胜, 王豪. 10Gb/s光接收机跨阻前置放大器芯片设计研究[J]. 半导体光电, 2017, 38(4): 562. 李久, 何进, 童志强, 黄启俊, 常胜, 王豪. Study on Design of the Transimpedance Preamplifier Chip for 10Gb/s Optical Receiver[J]. Semiconductor Optoelectronics, 2017, 38(4): 562.