基于器件物理模拟分析法研究PIN限幅器二极管的微波脉冲热效应, 利用Sentaurus-TCAD仿真器建立了PIN二极管二维多物理场仿真模型, 研究了在5.3, 7.5, 9.4 GHz的微波脉冲作用下, 不同Ⅰ层厚度的二极管模型的峰值温度变化。仿真结果表明: Ⅰ层厚度对PIN二极管微波脉冲热效应的影响分两个阶段, 拐点前厚度增加, 峰值温度提高, 拐点后厚度增加峰值温度降低; 一定范围内微波脉冲频率的变化对“拐点”影响不明显。

Based on the device physics simulation, we studied the microwave pulse thermal process of the PIN limiter diode, and the device’s 2D multi-physical field model was established with software Sentaurus-TCAD. The peak temperature change of different thickness of Ⅰ layer was analyzed under injections of 5.3,7.5 and 9.4 GHz microwave signals. Simulation results show that the influence of Ⅰ layer thickness on thermal process of PIN diode divides into two stages, before the “turning point”, the peak temperature changes with the increasing of Ⅰ layer thickness, after the point the peak temperature decreases with the increasing of Ⅰ layer thickness. The influence of microwave pulse frequency on the “turning point” is not obvious.