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Tensile-strained Ge/SiGe multiple quantum well microdisks

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Abstract

An efficient monolithically integrated laser on Si remains the missing component to enable Si photonics. We discuss the design and fabrication of suspended and tensile-strained Ge/SiGe multiple quantum well microdisk resonators on Si for laser applications in Si photonics using an all-around SiNx stressor. An etch-stop technique in the Ge/SiGe system is demonstrated and allows the capability of removing the defective buffer layer as well as providing precise thickness control of the resonators. Photoluminescence and Raman spectroscopy indicate that we have achieved a biaxial tensile strain shift as high as 0.88% in the microdisk resonators by adding a high-stress SiNx layer. Optical gain calculations show that high positive net gain can be achieved in Ge quantum wells with 1% external biaxial tensile strain.

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DOI:10.1364/prj.5.0000b7

基金项目:National Science Foundation (NSF)10.13039/100000001 (ECS-9731293).

收稿日期:2017-06-02

录用日期:2017-08-04

网络出版日期:2017-08-05

作者单位    点击查看

Xiaochi Chen:Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
Colleen S. Fenrich:Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
Muyu Xue:Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
Ming-Yen Kao:Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan
Kai Zang:Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
Ching-Ying Lu:Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
Edward T. Fei:Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
Yusi Chen:Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
Yijie Huo:Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
Theodore I. Kamins:Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
James S. Harris:Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

联系人作者:Xiaochi Chen(chenxiaochihust@gmail.com)

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引用该论文

Xiaochi Chen, Colleen S. Fenrich, Muyu Xue, Ming-Yen Kao, Kai Zang, Ching-Ying Lu, Edward T. Fei, Yusi Chen, Yijie Huo, Theodore I. Kamins, and James S. Harris, "Tensile-strained Ge/SiGe multiple quantum well microdisks," Photonics Research 5(6), B7 (2017)

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