光电子快报(英文版), 2016, 12 (6): 430, Published Online: Oct. 12, 2017   

Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO4

Author Affiliations
1 Center for Medical Device Evaluation, China Food and Drug Administration, Beijing 100044, China
2 Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Laser, School of Science, Beijing Jiaotong University, Beijing 100044, China
Abstract
Combining the self-stimulated Raman scattering technology and saturable absorber of Cr4+:YAG, a 1.17 μm c-cut Nd:GdVO4picosecond Q-switched laser is demonstrated in this paper. With an incident pump power of 10 W, the Q-switched laser with average power of 430 mW for 1.17 μm, pulse width of 270 ps, repetition rate of 13 kHz and the first order Stokes conversion efficiency of 4.3% is obtained. The Q-switched pulse width can be the narrowest in our research. In addition, the yellow laser at 0.58 μm is also achieved by using the LiB3O5 frequency doubling crystal.

SHEN Gao, LI Zuo-han, HAN Ming. Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO4[J]. 光电子快报(英文版), 2016, 12(6): 430.

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