激光与光电子学进展, 2017, 54 (11): 113104, 网络出版: 2017-11-17  

以不同前驱体制备的TiAlC薄膜的性能对比 下载: 591次

Performance Comparison of TiAlC Films Prepared with Different Precursors
作者单位
凯里学院物理与电子工程学院, 贵州 凯里 556011
摘要
采用原子层沉积技术,以Al(CH3)3为铝的前驱体,分别以TiCl4和四(二甲基氨基)钛(TDMAT)为钛的前驱体制备了两种TiAlC薄膜,并对比分析了它们的薄膜性能。结果表明,这两种薄膜均存在不同程度的自然氧化;以TDMAT为前驱体制备的膜层的光学带隙有两个值,分别是0.68 eV和2.00 eV,而以TiCl4为前驱体制备的薄膜的光学带隙为0.61 eV,前者的平均透射率、沉积速率、电阻率及表面粗糙度均高于后者的,但前者的厚度均匀性较差;以TiCl4为前驱体制备的薄膜为无定形结构,而在以TDMAT为前驱体制备的薄膜中出现了TiN晶体;相对于有机化合物TDMAT而言,无机化合物TiCl4更适合作为制备TiAlC栅介质材料的前驱体。
Abstract
With the Al(CH3)3 as the precursor of Al elements, two kinds of TiAlC films are prepared by using the atomic layer deposition technique with the TiCl4 and the tetrakis (dimethylamino) titanium (TDMAT) as precursors of titanium elements, respectively, and their film performances are compared and analyzed. The results show that, both these two kinds of TiAlC films are oxidized naturally with different degrees. The optical band gap of films prepared with the TDMAT as precursor has two value of 0.68 eV and 2.00 eV, respectively, while that of the thin films prepared with the TiCl4 as precursor is 0.61 eV. Moreover, the average transmissivity, deposition rate, resistivity, and surface roughness of the former are all higher than those of the latter, while the thickness uniformity of the former is worse than that of the latter. The thin films prepared with the TiCl4 as precursor show an amorphous structure, while in the thin films prepared with the TDMAT as precursor, the TiN crystal appears. Compared with the organic compound TDMAT, the inorganic compound TiCl4 is more suitable as the precursor to prepare TiAlC gate dielectric materials.

杨永亮, 李娜, 张泓筠. 以不同前驱体制备的TiAlC薄膜的性能对比[J]. 激光与光电子学进展, 2017, 54(11): 113104. Yang Yongliang, Li Na, Zhang Hongyun. Performance Comparison of TiAlC Films Prepared with Different Precursors[J]. Laser & Optoelectronics Progress, 2017, 54(11): 113104.

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