Photonics Research, 2017, 5 (6): 06000567, Published Online: Dec. 7, 2017
1.54 μm photoluminescence enhancenment of Er3+-doped ZnO films containing nc-Ge: joint effect from Er3+ local environment changing and energy transfer of nc-Ge 
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(160.2540) Fluorescent and luminescent materials (160.4236) Nanomaterials (160.5690) Rare-earth-doped materials (310.6860) Thin films optical properties (310.1860) Deposition and fabrication.
Abstract
ZnO films containing Er and Ge nanocrystals (nc-Ge) were synthesized and their photoluminescence (PL) properties were studied. Visible and near-infrared PL intensities are found to be greatly increased in nc-Ge-containing film. Er-related 1.54 μm emission has been investigated under several excitation conditions upon different kinds of Ge, Er codoped ZnO thin films. 1.54 μm PL enhancement accompanied by the appearance of nc-Ge implies a significant correlation between nc-Ge and PL emission of Er3+. The increased intensity of 1.54 μm in Ge:Er:ZnO film is considered to come from the joint effect of the local potential distortion around Er3+ and the possible energy transfer from nc-Ge to Er3+.
Ranran Fan, Fei Lu, Kaikai Li. 1.54 μm photoluminescence enhancenment of Er3+-doped ZnO films containing nc-Ge: joint effect from Er3+ local environment changing and energy transfer of nc-Ge[J]. Photonics Research, 2017, 5(6): 06000567.
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