采用分子束外延技术(MBE)对GaAs/AlxGa1-xAs二维电子气(2DEG)样品进行了制备, 样品制备过程中, 通过改变Al的组分含量、隔离层厚度、对比体掺杂与δ掺杂两种方式, 在300 K条件下对制备的样品进行了霍尔测试, 获得了室温迁移率7.205E3cm2/Vs, 载流子浓度为1.787E12/cm3的GaAs/AlxGa1-xAs二维电子气沟道结构, 并采用Mathematica软件分别计算了不同沟道宽度时300 K、77 K温度下GaAs基HEMT结构的太赫兹探测响应率, 为HEMT场效应管太赫兹探测器的研究和制备提供了参考依据.

The 2DEG samples of GaAs/AlxGa1-xAs was prepared by adopting MBE. In the process of sample preparation, by changing the constituent content of Al and the thickness of the isolation layer and comparing the body doping with the delta doping, we perform the Hall test under the condition of 300 K the migration rate of room temperature is 7.205×103 cm2/Vs and the carrier concentration is the open groove structure of 2DEG of GaAs/AlxGa1-xAs, which is 1.787×1012/cm3. Besides, the software of Mathematica is adopted to respectively calculate the THz response rates of GaAs-based HEMT structures with different channel widths under the temperature of 300 K and 77 K, which have provided the references for the research and preparation of HEMT THz detectors.