Photonics Research, 2018, 6 (4): 04000290, Published Online: Aug. 1, 2018  

High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator Download: 678次

Author Affiliations
1 Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602, Singapore
2 School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
3 Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
4 e-mail: tancs@ntu.edu.sg
Abstract
High-performance GaInP/AlGaInP multi-quantum well light-emitting diodes (LEDs) grown on a low threading dislocation density (TDD) germanium-on-insulator (GOI) substrate have been demonstrated. The low TDD of the GOI substrate is realized through Ge epitaxial growth, wafer bonding, and layer transfer processes on 200 mm wafers. With O2 annealing, the TDD of the GOI substrate can be reduced to 1.2×106 cm 2. LEDs fabricated on this GOI substrate exhibit record-high optical output power of 1.3 mW at a 670 nm peak wavelength under 280 mA current injection. This output power level is at least 2 times higher compared to other reports of similar devices on a silicon (Si) substrate without degrading the electrical performance. These results demonstrate great promise for the monolithic integration of visible-band optical sources with Si-based electronic circuitry and realization of high-density RGB (red, green, and blue) micro-LED arrays with control circuitry.

Yue Wang, Bing Wang, Wardhana A. Sasangka, Shuyu Bao, Yiping Zhang, Hilmi Volkan Demir, Jurgen Michel, Kenneth Eng Kian Lee, Soon Fatt Yoon, Eugene A. Fitzgerald, Chuan Seng Tan, Kwang Hong Lee. High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator[J]. Photonics Research, 2018, 6(4): 04000290.

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