量子电子学报, 2018, 35 (2): 236, 网络出版: 2018-04-23
内建电场和流体静压力对GaN量子点中激子光学性质的影响
Influences of built-in electric field and hydrostatic pressure on optical properties of exciton in GaN quantum dots
光电子学 量子点 激子 光吸收 线性折射率变化 optoelectronics quantum dot exciton optical absorption linear refractive index variation
摘要
在有效质量和偶极矩近似下,考虑自发和压电极化产生的内建电场(BEF)、晶格失配产生的应变及外加流体静压力对材料参数的调节, 采用变分法和密度矩阵法,研究了内建电场及外加流体静压力对应变纤锌矿GaN/AlxGa1-xN柱形量子点中激子光跃迁吸收系数和线性光折射率变化的影响。 结果表明:内建电场使激子光跃迁吸收峰强度和线性光折射率变化范围减小,光跃迁吸收峰及线性光折射率变化的两个峰值向低能方向移动, 发生明显红移,且三元混晶中Al的含量越高,红移量越大;流体静压力减小了激子光跃迁吸收峰强度和线性光折射率的变化范围, 使光跃迁吸收峰及线性光折射率变化的两个峰值向高能方向移动,出现蓝移。
Abstract
In the case of effective mass and dipole approximation, considering the built-in electric field(BEF) generated by spontaneous and piezoelectric polarization, strain caused by lattice mismatch and adjustment of material parameters by static pressure of external fluid, the effects of BEF and external hydrostatic pressure on the absorption coefficient of exciton optical transition and linear optical refractive index variation in a strained wurtzite(WZ) GaN/AlxGa1-xN cylindrical quantum dot are investigated by using variation method and density matrix method. Results show that the absorption peak intensity of exciton optical transition and linear optical refractive index are reduced by built-in electric field. The absorption peak of optical transition and two peaks of linear optical refractive index move towards low energy direction, and red-shift occurs obviously. The higher the content of Al in ternary mixed crystal, the greater the red-shift amount will be. Absorption peak intensity of exciton light transition and variation range of linear optical refractive index are reduced by hydrostatic pressure. The absorption peak of optical transition and two peaks of linear optical refractive index move towards high energy direction, and blue-shift occurs.
郑冬梅, 肖波齐, 黄思俞, 王宗篪. 内建电场和流体静压力对GaN量子点中激子光学性质的影响[J]. 量子电子学报, 2018, 35(2): 236. ZHENG Dongmei, XIAO Boqi, HUANG Siyu, WANG Zongchi. Influences of built-in electric field and hydrostatic pressure on optical properties of exciton in GaN quantum dots[J]. Chinese Journal of Quantum Electronics, 2018, 35(2): 236.