红外与激光工程, 2018, 47 (3): 0321004, 网络出版: 2018-04-26   

离子束溅射氧化钽薄膜光学特性的热处理效应

Annealing effect of the optical properties of tantalum oxide thin film prepared by ion beam sputtering
作者单位
1 哈尔滨工业大学 可调谐激光技术国家级重点实验室, 黑龙江 哈尔滨 150001
2 中国航天科工飞航技术研究院 天津津航技术物理研究所天津市薄膜光学重点实验室, 天津 300308
摘要
主要研究了离子束溅射制备的氧化钽薄膜在大气氛围下热处理对其光学特性的影响规律。实验中热处理温度范围的选择为150~550 ℃, 间隔为200 ℃。研究中分别采用介电常数的Cody-Lorentz色散模型和振子模型对氧化钽薄膜的能带特性(1~4 eV)和红外波段(400~4 000 cm-1)的微结构振动特性进行了表征。研究结果表明, 在150 ℃和350 ℃之间出现热处理温度转折点, 即热处理温度高于此值时消光系数增加。Urbach能量的变化与消光系数趋势相同, 而禁带宽度的变化与消光系数恰好相反。通过红外微结构振动特性分析, 薄膜中仍存在亚氧化物的化学计量缺陷。
Abstract
The effect of annealing in atmospheric environment on Ta2O5 thin films was researched, which were prepared by ion beam sputtering. The annealing temperatures ranged from 150 ℃ to 550 ℃, and the interval was 200 ℃. The optical band gap (1-4 eV) of the Ta2O5 thin film was characterized by the Cody-Lorentz dielectric model. And the microstructure vibration was characterized by the oscillator model in the range of infrared region(400-4 000 cm-1). The results show that the turning point of the annealing temperature appeared between 150 ℃ and 350 ℃. The extinction coefficient of the thin film increased when the annealing temperature was above the turning point. The variation of Urbach energy was in accordance with the extinction coefficient, but the variation of band gap was opposite. By analyzing the microstructure vibration in infrared, it′s found that the stoichiometry defect of the protoxide was in the Ta2O5 films.

王利栓, 杨霄, 刘丹丹, 姜承慧, 刘华松, 季一勤, 张锋, 樊荣伟, 陈德应. 离子束溅射氧化钽薄膜光学特性的热处理效应[J]. 红外与激光工程, 2018, 47(3): 0321004. Wang Lishuan, Yang Xiao, Liu Dandan, Jiang Chenghui, Liu Huasong, Ji Yiqin, Zhang Feng, Fan Rongwei, Chen Deying. Annealing effect of the optical properties of tantalum oxide thin film prepared by ion beam sputtering[J]. Infrared and Laser Engineering, 2018, 47(3): 0321004.

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