根据扫描干涉场曝光的特点,针对光刻胶层内曝光量的驻波效应,建立了动态曝光模型。基于快速推进法建立了显影模型,得到了光栅掩模槽形的演变规律。为减弱驻波效应的影响,提出了一种抗反射层最优厚度的设计方法。仿真结果表明,建立的曝光和显影模型能有效预测光栅掩模的槽形轮廓,同时可优化抗反射膜的厚度。

Based on the characteristics of scanning beam interference lithography (SBIL), the dynamic exposure model is established for the standing wave effect of the exposure in the photoresist layer. Based on the fast marching method, the development model is established and the evolution rule of grating mask grooves is obtained. In order to reduce the influence of the standing wave effect, a design method for the optimal thickness of anti-reflective coatings (ARCs) is proposed. The simulation results show that the established exposure and development models can effectively predict the groove profile of the grating masks, and optimize the thickness of ARCs simultaneously.