采用金属有机物化学气相沉积设备生长InGaAs/AlGaAs应变多量子阱有源区和双氧化限制层的外延整体结构,利用断点监控电感耦合等离子体刻蚀技术、精确湿法氧化控制技术等芯片制造技术,实现了氧化孔径为7 μm、相邻单元间隔为250 μm的高速调制4×15 Gbit/s 850 nm垂直腔面发射激光器(VCSEL)列阵。测试得到了VCSEL列阵的静态特性和动态特性:阈值电流为0.7 mA,斜效率为0.8 W/A;在6 mA工作电流下,工作电压为2.3 V,光功率为4.5 mW。在15 Gbit/s调制速率下,眼图轮廓清晰,线迹很细,抖动较小且无明显串扰。对比列阵各单元在15 Gbit/s调制速率下眼图的上升时间、下降时间、信噪比、均方根抖动等相关参数,结果表明其动态性能的一致性良好。利用箱线图分析得出外延片上VCSEL器件性能的一致性能良好,能够满足批量生产的要求。

A high-speed modulation of 4×15 Gbit/s 850 nm vertical cavity surface emitting lasers (VCSEL) array with oxidation aperture of 7 μm and adjacent unit interval of 250 μm is demonstrated. Its epitaxy structure has a strained multiple quantum well active region of InGaAs/AlGaAs and a double oxide confinement layer grown with the metal organic chemical vapor deposition (MOCVD) apparatus. And in the chip fabrication process, a series of technologies are used, such as the breakpoint monitor inductively coupled plasma etching and the wet oxidation precise control. The static and dynamic characteristics of the VCSEL array are measured. For the single VCSEL cell, the threshold current and slop efficiency are 0.7 mA and 0.8 W/A, respectively. And the optical power reaches 4.5 mW at the working current of 6 mA, meanwhile the voltage is 2.3 V. Modulated by a 15 Gbit/s non-return zero code (NRZ), VCSEL cells perform eye diagrams with clear profiles, fine stitches, tiny jitter and few crosstalk. For the eye diagram relative parameters, such as rise time, fall time, signal-to-noise ratio, root mean square jitter and so on, some comparisons are made among VCSEL cells in the array. The results indicate that the consistency of the dynamic characteristics is good. In addition, the consistency of device static characteristics among the VCSEL cells in the whole wafer is analyzed through the method of boxplot. All characteristics show a high consistency, which can meet the requirement of mass-production.