发光学报, 2018, 39 (4): 534, 网络出版: 2018-05-07  

反射式倒装对1 300 nm激光器性能改善的分析

Analysis The Performance Improvement of 1 300 nm Laser with Reflective Flip Chip Package
作者单位
1 中国科学院 福建物质结构研究所, 福建 福州350002
2 中国科学院大学, 北京100049
摘要
对AlGaInAs多量子阱1 300 nm FP激光器进行反射式倒装封装,在热沉上靠近激光器出光端面约10~20 μm的区域采用Au反射层,对器件垂直方向出光进行反射。测试结果显示,与常规封装相比,采用这种结构封装芯片垂直发散角从34.5°降低至17°,器件单模光纤的平均耦合功率从1 850 μW提高至2 326 μW,耦合效率从21.1%提高到26.5%。对两种激光器进行光电参数的测量,结果表明:与常规封装器件相比,采用反射式倒装结构器件的饱和电流从135 mA提高至155 mA,饱和输出功率从37 mW提高至42 mW,热阻从194 K/W降低至131 K/W。最后对两种器件在95 ℃环境温度、100 mA电流下进行加速老化实验,老化结果显示:在老化条件下,器件衰退系数从常规封装的4.22×10-5降低至1.06×10-5,寿命从5 283 h提高至21 027 h。
Abstract
AlGaInAs MQWs 1 300 nm FP lasers were packaged p-side down with a reflective submount which had 10-20 μm Au film near the facets of laser bare die. Compared to convention package form laser (LD-B), the divergence angle at FWHM of flip chip (LD-A) with a Au reflector decreases from 34.5° to 17° , and the average SMF coupling power increases from 1 850 μW to 2 326 μW, as the coupling efficiency increases from 21.1% to 26.5%. Compared to LD-B, the saturated current of LD-A increases from 135 mA to 155 mA, the saturated output power increasses from 37 mW to 42 mW, and the thermal resistance decreases from 194 K/W to 131 K/W. Finnaly, the aging experiments are carried out under the condition of 95 ℃ ambient temperature and 100 mA injection current. Compared to LD-B, the degradation coefficient of LD-A under aging condition decreases from 4.22×10-5 to 1.06×10-5, and the lifetime increases from 5 283 h to 21 027 h.

薛正群, 王凌华, 苏辉. 反射式倒装对1 300 nm激光器性能改善的分析[J]. 发光学报, 2018, 39(4): 534. XUE Zheng-qun, WANG Ling-hua, SU Hui. Analysis The Performance Improvement of 1 300 nm Laser with Reflective Flip Chip Package[J]. Chinese Journal of Luminescence, 2018, 39(4): 534.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!