以GaN微米柱为平台,计算了激子极化激元的Gross-Pitaevskii方程(GP方程)。通过计算,初步分析了激子极化激元凝聚态维持稳定的时间,同时与GaAs材料制备的微腔进行了对比,讨论了失谐、耗散速率以及拉比分裂等参数对激子极化激元凝聚态稳定性的影响,发现了随着失谐参数的增大,激子极化激元凝聚态保持稳定的时间逐步延长。当失谐Δ=±75时,稳定时间达到30 ps以上,且不再大幅变化。由于选用的是宽禁带半导体材料GaN制备的微米柱,因此拉比分裂值相比GaAs等材料来说非常大,对于常温下形成激子极化激元凝聚态提供了充足的条件。

In this paper, the Gross-Pitaevskii equation of the exciton-polariton condensation is calculated by using the GaN micrometer column as the platform. The stability time of the condensation is analyzed, and compared with the microcavities prepared by GaAs materials. The effect of the parameters on the stability of the exciton-polariton condensation is dissussed, such as detuning, dissipation rate, and Rabi splitting. It is found that with the increase of the detuning parameters, the excited state of the condensation is gradually prolonged. When detuning Δ=±75, the settling time is above 30 ps and not changing drastically. Since the wide band gap semiconductor material GaN prepared by the micro-column is chosen, the Rabi splitting is very large compared to the GaAs and other materials, which provides sufficient conditions for the formation of exciton-polariton condensation at room temperature.