采用湿法硫钝化的方式,显著降低了砷化镓(GaAs)材料的表面态密度。钝化处理后的GaAs薄膜光致发光强度提高了约14倍,光电流和响应度均增大。从能带角度分析了样品性能提升的原因,结果表明,钝化处理有利于表面态密度和肖特基势垒高度的调节,进而提升了样品性能。

The surface state density of gallium arsenide (GaAs) materials can be significantly lowered by surface sulfur passivation. After passivation, a 14-fold enhancement in the photoluminescence intensity of GaAs films is observed and the photocurrent and responsivity also increase. The performance improvement is analyzed from the perspective of energy bands and the results indicate that the passivation treatment is helpful for the adjustments of the surface density and the Schottky barrier height, which further improves the material performances.