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表面硫钝化对GaAs材料光响应特性的影响

Effect of Surface Sulfur Passivation on Photoresponse Characteristics of GaAs Materials

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摘要

采用湿法硫钝化的方式,显著降低了砷化镓(GaAs)材料的表面态密度。钝化处理后的GaAs薄膜光致发光强度提高了约14倍,光电流和响应度均增大。从能带角度分析了样品性能提升的原因,结果表明,钝化处理有利于表面态密度和肖特基势垒高度的调节,进而提升了样品性能。

Abstract

The surface state density of gallium arsenide (GaAs) materials can be significantly lowered by surface sulfur passivation. After passivation, a 14-fold enhancement in the photoluminescence intensity of GaAs films is observed and the photocurrent and responsivity also increase. The performance improvement is analyzed from the perspective of energy bands and the results indicate that the passivation treatment is helpful for the adjustments of the surface density and the Schottky barrier height, which further improves the material performances.

Newport宣传-MKS新实验室计划
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中图分类号:O472

DOI:10.3788/cjl201845.0603002

所属栏目:材料与薄膜

基金项目:国家自然科学基金(61404009,61474010,61574022,61504012,61674021,11674038)、吉林省科技发展计划(20160519007JH,20160101255JC,20160204074GX,20170520117JH)

收稿日期:2017-11-02

修改稿日期:2017-12-21

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作者单位    点击查看

夏宁:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春130022
方铉:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春130022
容天宇:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春130022
王登魁:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春130022
房丹:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春130022
唐吉龙:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春130022
王新伟:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春130022
王晓华:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春130022
李永峰:吉林大学物理学院, 吉林 长春 130023
姚斌:吉林大学物理学院, 吉林 长春 130023
魏志鹏:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春130022

联系人作者:方铉(fangxuan110@126.com)

备注:(1992—),男,硕士研究生,主要从事半导体光电探测器和低维材料方面的研究。E-mail: narutoxia@163.com

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引用该论文

Xia Ning,Fang Xuan,Rong Tianyu,Wang Dengkui,Fang Dan,Tang Jilong,Wang Xinwei,Wang Xiaohua,Li Yongfeng,Yao Bin,Wei Zhipeng. Effect of Surface Sulfur Passivation on Photoresponse Characteristics of GaAs Materials[J]. Chinese Journal of Lasers, 2018, 45(6): 0603002

夏宁,方铉,容天宇,王登魁,房丹,唐吉龙,王新伟,王晓华,李永峰,姚斌,魏志鹏. 表面硫钝化对GaAs材料光响应特性的影响[J]. 中国激光, 2018, 45(6): 0603002

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