InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter: publisher’s note

Anna Kafar; Szymon Stanczyk; Marcin Sarzynski; Szymon Grzanka; Jakub Goss; Irina Makarowa; Anna Nowakowska-Siwinska; Tadek Suski; Piotr Perlin

doi:doi:10.1364/PRJ.6.000652

Photonics Research, 2018, 6 (6): 06000652, Published Online: Jul. 2, 2018

InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter: publisher’s note

Anna Kafar ^1,*Szymon Stanczyk ¹Marcin Sarzynski ¹Szymon Grzanka ^1,2Jakub Goss ¹Irina Makarowa ²Anna Nowakowska-Siwinska ²Tadek Suski ¹Piotr Perlin ^1,2

Author Affiliations

¹ Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland

² TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland

Optoelectronics Optical devices Semiconductor materials Quantum-well, -wire and -dot devices

Abstract

This publisher’s note reports the revision of the funding section in Photon. Res.5, A30 (2017)PRHEIZ2327-9125

10.1364/PRJ.5.000A30

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Anna Kafar, Szymon Stanczyk, Marcin Sarzynski, Szymon Grzanka, Jakub Goss, Irina Makarowa, Anna Nowakowska-Siwinska, Tadek Suski, Piotr Perlin. InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter: publisher’s note[J]. Photonics Research, 2018, 6(6): 06000652.

InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter: publisher’s note

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