Chinese Optics Letters, 2018, 16 (6): 060401, Published Online: Jul. 2, 2018
Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection Download: 742次
Abstract
In this Letter, we report large-area (600 μm diameter) 4H-SiC avalanche photodiodes (APDs) with high gain and low dark current for visible-blind ultraviolet detection. Based on the separate absorption and multiplication structure, 4H-SiC APDs passivated with SiN x instead of SiO 2 are demonstrated for the first time, to the best of our knowledge. Benefitting from the SiN x passivation, the surface leakage current is effectively suppressed. At room temperature, high multiplication gain of 6.5 × 10 5 and low dark current density of 0.88 μ A / cm 2 at the gain of 1000 are achieved for our devices, which are comparable to the previously reported small-area SiC APDs.
Xingye Zhou, Jia Li, Weili Lu, Yuangang Wang, Xubo Song, Shunzheng Yin, Xin Tan, Yuanjie Lü, Hongyu Guo, Guodong Gu, Zhihong Feng. Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection[J]. Chinese Optics Letters, 2018, 16(6): 060401.