Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm
In this paper, high-speed surface-illuminated Ge-on-Si pin photodiodes with improved efficiency are demonstrated. With photon-trapping microhole features, the external quantum efficiency (EQE) of the Ge-on-Si pin diode is >80% at 1300 nm and 73% at 1550 nm with an intrinsic Ge layer of only 2 μm thickness, showing much improvement compared to one without microholes. More than threefold EQE improvement is also observed at longer wavelengths beyond 1550 nm. These results make the microhole-enabled Ge-on-Si photodiodes promising to cover both the existing C and L bands, as well as a new data transmission window (1620–1700 nm), which can be used to enhance the capacity of conventional standard single-mode fiber cables. These photodiodes have potential for many applications, such as inter-/intra-datacenters, passive optical networks, metro and long-haul dense wavelength division multiplexing systems, eye-safe lidar systems, and quantum communications. The CMOS and BiCMOS monolithic integration compatibility of this work is also attractive for Ge CMOS, near-infrared sensing, and communication integration.
基金项目：Army Research Office (ARO)10.13039/100000183 (W911NF-14-4-0341); W&WSens Devices, Inc.
Cesar Bartolo-Perez：Electrical and Computer Engineering, University of California—Davis, Davis, California 95618, USA
Yang Gao：Electrical and Computer Engineering, University of California—Davis, Davis, California 95618, USA
Ekaterina Ponizovskaya Devine：Electrical and Computer Engineering, University of California—Davis, Davis, California 95618, USAW&WSens Devices, Inc., 4546 El Camino, Suite 215, Los Altos, California 94022, USA
Soroush Ghandiparsi：Electrical and Computer Engineering, University of California—Davis, Davis, California 95618, USA
Kazim G. Polat：Electrical and Computer Engineering, University of California—Davis, Davis, California 95618, USA
Hasina H. Mamtaz：Electrical and Computer Engineering, University of California—Davis, Davis, California 95618, USA
Toshishige Yamada：W&WSens Devices, Inc., 4546 El Camino, Suite 215, Los Altos, California 94022, USAElectrical Engineering, Baskin School of Engineering, University of California, Santa Cruz, California 95064, USA
Aly F. Elrefaie：Electrical and Computer Engineering, University of California—Davis, Davis, California 95618, USAW&WSens Devices, Inc., 4546 El Camino, Suite 215, Los Altos, California 94022, USA
Shih-Yuan Wang：W&WSens Devices, Inc., 4546 El Camino, Suite 215, Los Altos, California 94022, USA
M. Saif Islam：Electrical and Computer Engineering, University of California—Davis, Davis, California 95618, USAe-mail: email@example.com
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Hilal Cansizoglu, Cesar Bartolo-Perez, Yang Gao, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi, Kazim G. Polat, Hasina H. Mamtaz, Toshishige Yamada, Aly F. Elrefaie, Shih-Yuan Wang, and M. Saif Islam, "Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm," Photonics Research 6(7), 734-742 (2018)