Vertically standing PtSe2 film: a saturable absorber for a passively mode-locked Nd:LuVO4 laser
The novel vertically standing PtSe2 film on transparent quartz was prepared by selenization of platinum film deposited by the magnetron sputtering method, and an Nd:LuVO4 passively mode-locked solid-state laser was realized by using the fabricated PtSe2 film as a saturable absorber. The X-ray diffraction pattern and Raman spectrum of the film indicate its good crystallinity with a layered structure. The thickness of PtSe2 film is measured to be 24 nm according to the cross-section height profile of the atomic force microscope image. High-resolution transmission electron microscopy images clearly demonstrate its vertically standing structure with an interlayer distance of 0.54 nm along the c-axis direction. The modulation depth (ΔT) and saturation fluence (?s) of PtSe2 film are measured to be 12.6% and 17.1 μJ/cm2, respectively. The obtained mode-locked laser spectrum has a central wavelength of 1066.573 nm, with a 3 dB bandwidth of 0.106 nm. The transform limited pulse width of the mode-locked laser was calculated to be 15.8 ps. A maximum average output power of 180 mW with a working repetition rate of 61.3 MHz is obtained. To the best of our knowledge, this is the first report of the generation of ultrafast mode-locked laser pulses by using layered PtSe2 as a saturable absorber.
基金项目：National Natural Science Foundation of China (NSFC)10.13039/501100001809 (61705044); One-Hundred Young Talents Program of Guangdong University of Technology (GDUT)10.13039/501100008326 (220413145); Research Grants Council, University Grants Committee (RGC, UGC)10.13039/501100002920 (GRF 152109/16E PolyU B-Q52T); Hong Kong Polytechnic University (PolyU)10.13039/501100004377 (G-YBVG).
Xiaowen Huang：Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
Junshan He：School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
Yajun Lou：School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
Longhui Zeng：Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
Yonghui Li：School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
Hui Long：Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
Jingbo Li：School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
Ling Zhang：Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, Chinae-mail: firstname.lastname@example.org
Yuen Hong Tsang：Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, Chinae-mail: email@example.com
【1】C. Y. Tang, P. K. Cheng, L. L. Tao, H. Long, L. H. Zeng, Q. Wen, and Y. H. Tsang, “Passively Q-switched Nd:YVO4 laser using WS2 saturable absorber fabricated by radio frequency magnetron sputtering deposition,” J. Lightwave Technol. 35 , 4120–4124 (2017).
【2】X. Yin, Z. Ye, D. A. Chenet, Y. Ye, K. O’Brien, J. C. Hone, and X. Zhang, “Edge nonlinear optics on a MoS2 atomic monolayer,” Science 344 , 488–490 (2014).
【3】P. Wang, S. Liu, W. Luo, H. Fang, F. Gong, N. Guo, Z. Chen, J. Zou, Y. Huang, X. Zhou, J. Wang, X. Chen, W. Lu, F. Xiu, and W. Hu, “Arrayed van der Waals broadband detectors for dual-band detection,” Adv. Mater. 29 , 1–8 (2017).
【4】C. Xie, C. Mak, X. Tao, and F. Yan, “Photodetectors based on two-dimensional layered materials beyond graphene,” Adv. Funct. Mater. 27 , 1–41 (2017).
【5】J. Chu, F. Wang, L. Yin, L. Lei, C. Yan, F. Wang, Y. Wen, Z. Wang, C. Jiang, L. Feng, J. Xiong, Y. Li, and J. He, “High-performance ultraviolet photodetector based on a few-layered 2D NiPS3 nanosheet,” Adv. Funct. Mater. 27 , 1701342 (2017).
【6】X. Chia, A. Adriano, P. Lazar, Z. Sofer, J. Luxa, and M. Pumera, “Layered platinum dichalcogenides (PtS2, PtSe2, and PtTe2) electrocatalysis: monotonic dependence on the chalcogen size,” Adv. Funct. Mater. 26 , 4306–4318 (2016).
【7】M. Zhang, C. Richard, T. Howe, R. I. Woodward, E. J. R. Kelleher, F. Torrisi, G. Hu, S. V. Popov, J. R. Taylor, and T. Hasan, “Solution processed MoS2-PVA composite for sub-bandgap mode-locking of a wideband tunable ultrafast Er:fiber laser,” Nano Res. 8 , 1522–1534 (2015).
【8】K. C. Kwon, S. Choi, K. Hong, C. W. Moon, Y. S. Shim, D. H. Kim, T. Kim, W. Sohn, J. Jeon, C. H. Lee, K. T. Nam, S. Han, S. Y. Kim, and H. W. Jang, “Wafer-scale transferable molybdenum disulfide thin-film catalysts for photoelectrochemical hydrogen production,” Energy Environ. Sci. 9 , 2240–2248 (2016).
【9】Y. Wang, L. Li, W. Yao, S. Song, J. T. Sun, J. Pan, X. Ren, C. Li, E. Okunishi, Y. Wang, E. Wang, Y. Shao, Y. Y. Zhang, H. Yang, E. F. Schwier, H. Iwasawa, K. Shimada, M. Taniguchi, Z. Cheng, S. Zhou, S. Du, S. J. Pennycook, S. T. Pantelides, and H. Gao, “Monolayer PtSe2, a new semiconducting transition-metal-dichalcogenide, epitaxially grown by direct selenization of Pt,” Nano Lett. 15 , 4013–4018 (2015).
【10】M. Yan, E. Wang, X. Zhou, G. Zhang, H. Zhang, K. Zhang, W. Yao, N. Lu, S. Yang, and S. Wu, “High quality atomically thin PtSe2 films grown by molecular beam epitaxy,” 2D Mater. 4 , 045015 (2017).
【11】Y. Zhao, J. Qiao, Z. Yu, P. Yu, K. Xu, S. Lau, W. Zhou, Z. Liu, X. Wang, W. Ji, and Y. Chai, “High-electron-mobility and air-stable 2D layered PtSe2 FETs,” Adv. Mater. 29 , 1604230 (2017).
【12】Z. Wang, Q. Li, F. Besenbacher, and M. Dong, “Facile synthesis of single crystal PtSe2 nanosheets for nanoscale electronics,” Adv. Mater. 28 , 10224–10229 (2016).
【13】C. Yim, K. Lee, N. McEvoy, M. O’Brien, S. Riazimehr, N. C. Berner, C. P. Cullen, J. Kotakoski, J. C. Meyer, M. C. Lemme, and G. S. Duesberg, “High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature, ” ACS Nano 10 , 9550–9558 (2016).
【14】L. H. Zeng, S. H. Lin, Z. J. Li, Z. X. Zhang, T. F. Zhang, C. Xie, C. H. Mak, Y. Chai, S. P. Lau, L. B. Luo, and Y. H. Tsang, “Fast, self-driven, air-stable and broadband photodetector based on vertically aligned PtSe2/GaAs heterojunction,” Adv. Funct. Mater. 28 , 1705970 (2018).
【15】K. Ullah, S. Ye, Z. Lei, K. Y. Cho, and W. C. Oh, “Synergistic effect of PtSe2 and graphene sheets supported by TiO2 as cocatalysts synthesized via microwave techniques for improved photocatalytic activity,” Catal. Sci. Technol. 5 , 184–198 (2015).
【16】M. Gong, H. Yu, X. Wushouer, and P. Yan, “Passively mode-locked Nd:YVO4 picosecond laser with oblique incidence on SESAM,” Laser Phys. Lett. 5 , 514–517 (2008).
【17】C. Y. Tang, Y. Chai, H. Long, L. L. Tao, L. H. Zeng, Y. H. Tsang, L. Zhang, and X. C. Lin, “High-power passively mode-locked Nd:YVO4 laser using SWCNT saturable absorber fabricated by dip coating method,” Opt. Express 23 , 4880–4886 (2015).
【18】Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Q. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4 , 803–810 (2010).
【19】P. L. Huang, S. C. Lin, C. Y. Yeh, H. H. Kuo, S. H. Huang, G. R. Lin, L. J. Li, C. Y. Su, and W. H. Cheng, “Stable mode-locked fiber laser based on CVD fabricated graphene saturable absorber,” Opt. Express 20 , 2460–2465 (2012).
【20】J. L. Xu, X. L. Li, Y. Z. Wu, X. P. Hao, J. L. He, and K. J. Yang, “Graphene saturable absorber mirror for ultra-fast-pulse solid-state laser,” Opt. Lett. 36 , 1948–1950 (2011).
【21】S. Liu, Z. Li, Y. Ge, H. Wang, R. Le, X. Jiang, J. Li, Q. Wen, and H. Zhang, “Graphene/phosphorene nano-heterojunction: facile synthesis, nonlinear optics and ultrafast photonics applications with enhanced performance,” Photon. Res. 5 , 662–668 (2017).
【22】Z. Luo, D. Wu, B. Xu, H. Xu, Z. Cai, J. Peng, J. Weng, S. Xu, C. Zhu, F. Wang, Z. Sun, and H. Zhang, “Two-dimensional material-based saturable absorbers: towards compact visible-wavelength all-fiber pulsed lasers,” Nanoscale 8 , 1066–1072 (2016).
【23】K. Wu, X. Zhang, J. Wang, X. Li, and J. Chen, “WS2 as a saturable absorber for ultrafast photonic applications of mode-locked and Q-switched lasers,” Opt. Express 23 , 11453–11461 (2015).
【24】C. Zhao, Y. Zou, Y. Chen, Z. Wang, S. Lu, H. Zhang, S. Wen, and D. Tang, “Wavelength-tunable picoseconds soliton fiber laser with topological insulator: Bi2Se3 as a mode locker,” Opt. Express 20 , 27888–27895 (2012).
【25】C. Zhao, H. Zhang, X. Qi, Y. Chen, Z. Wang, S. Wen, and D. Tang, “Ultra-short pulse generation by a topological insulator based saturable absorber,” Appl. Phys. Lett. 101 , 106101 (2012).
【26】Y. Chen, G. Jiang, S. Chen, Z. Guo, X. Yu, C. Zhao, H. Zhang, Q. Bao, S. Wen, D. Tang, and D. Fan, “Mechanically exfoliated black phosphorus as a new saturable absorber for both Q-switching and mode-locking laser operation,” Opt. Express 23 , 12823–12833 (2015).
【27】X. Su, Y. Wang, B. Zhang, R. Zhao, K. Yang, J. He, Q. Gu, Z. Jia, and X. Tao, “Femtosecond solid-state laser based on a few-layered black phosphorus saturable absorber,” Opt. Lett. 41 , 1945–1948 (2016).
【28】B. Zhang, F. Lou, R. Zhao, J. He, J. Li, X. Su, J. Ning, and K. Yang, “Exfoliated layers of black phosphorus as saturable absorber for ultrafast solid-state laser,” Opt. Lett. 40 , 3691–3694 (2015).
【29】L. Kong, Z. Qin, G. Xie, Z. Guo, H. Zhang, P. Yuan, and L. Qian, “Black phosphorus as broadband saturable absorber for pulsed lasers from 1??μm to 2.7??μm wavelength,” Laser Phys. Lett. 13 , 045801 (2016).
【30】Y. Song, S. Chen, Q. Zhang, L. Li, L. Zhao, H. Zhang, and D. Tang, “Vector soliton fiber laser passively mode locked by few layer black phosphorus-based optical saturable absorber,” Opt. Express 24 , 25933–25942 (2016).
【31】X. Jiang, S. Liu, W. Liang, S. Luo, Z. He, Y. Ge, H. Wang, R. Cao, F. Zhang, Q. Wen, J. Li, Q. Bao, D. Fan, and H. Zhang, “Broadband nonlinear photonics in few-layer MXene Ti3C2Tx(T?=?F, O, or OH) nanosheets,” Laser Photon. Rev. 12 , 1700229 (2017).
【32】F. Torrisi, D. Popa, S. Milana, Z. Jiang, T. Hasan, E. Lidorikis, and A. C. Ferrari, “Stable, surfactant-free graphene-styrene methymethacrylate composite for ultrafast lasers,” Adv. Opt. Mater. 4 , 1088–1097 (2016).
【33】L. Li, W. Wang, Y. Chai, H. Li, M. Tian, and T. Zhai, “Few-layered PtS2 phototransistor on h-BN with high gain,” Adv. Funct. Mater. 27 , 1701011 (2017).
【34】J. Du, Q. Wang, G. Jiang, C. Xu, C. Zhao, Y. Xiang, Y. Chen, S. Wen, and H. Zhang, “Ytterbium-doped fiber laser passively mode locked by few-layer molybdenum disulfide (MoS2) saturable absorber functioned with evanescent field interaction,” Sci. Rep. 4 , 6346 (2014).
【35】H. Xia, H. P. Li, C. Y. Lan, X. X. Zhang, S. J. Zhang, and Y. Liu, “Ultrafast erbium-doped fibre laser mode-locked by a CVD-grown molybdenum disulfide (MoS2) saturable absorber,” Opt. Express 22 , 17341–17348 (2014).
【36】Y. Sun, Y. Bai, D. Li, L. Hou, B. Bai, Y. Gong, L. Yu, and J. Bai, “946??nm Nd:YAG double Q-switched laser based on monolayer WSe2 saturable absorber,” Opt. Express 25 , 21037–21048 (2017).
【37】W. J. Tang, Y. G. Wang, K. J. Yang, J. Zhao, S. Z. Zhao, G. Q. Li, D. C. Li, T. Li, and W. C. Qiao, “1.36??W passively Q-switched YVO4/Nd:YVO4 laser with a WS2 saturable absorber,” IEEE Photon. Technol. Lett. 29 , 470–473 (2017).
【38】B. Xu, Y. Cheng, Y. Wang, Y. Huang, J. Peng, Z. Luo, H. Xu, Z. Cai, J. Weng, and R. Moncorge, “Passively Q-switched Nd:YAlO3 nanosecond laser using MoS2 as saturable absorber,” Opt. Express 22 , 28934–28940 (2014).
【39】F. Jia, H. Chen, P. Liu, Y. Huang, and Z. Luo, “Nanosecond-pulsed, dual-wavelength passively Q-switched c-cut Nd:YVO4 laser using a few-layer Bi2Se3 saturable absorber,” IEEE J. Sel. Top. Quantum Electron. 21 , 1601806 (2015).
Lili Tao, Xiaowen Huang, Junshan He, Yajun Lou, Longhui Zeng, Yonghui Li, Hui Long, Jingbo Li, Ling Zhang, and Yuen Hong Tsang, "Vertically standing PtSe2 film: a saturable absorber for a passively mode-locked Nd:LuVO4 laser," Photonics Research 6(7), 750-755 (2018)