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Optical saturation characteristics of dual- and single-injection Ge-on-Si photodetectors

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Abstract

The optical saturation characteristics in the germanium-on-silicon (Ge-on-Si) photodetector are studied for the first time, to the best of our knowledge. The relationship between the optical saturation characteristics and the optical field distribution in the Ge layer is illustrated by the simulation. This theory is verified by comparative experiments with single-injection and dual-injection structures. The dual-injection photodetector with a more balanced and uniform optical field distribution has a 13% higher responsivity at low optical power and 74.4% higher saturation current at 1550 nm. At higher optical power, the bandwidth of the dual-injection photodetector is five times larger than that of the single-injection photodetector.

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DOI:10.3788/col201816.072502

所属栏目:Optoelectronics

收稿日期:2018-03-08

录用日期:2018-05-21

网络出版日期:2018-06-29

作者单位    点击查看

Jishi Cui:State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
Bowen Bai:State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
Fenghe Yang:State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
Zhiping Zhou:State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China

联系人作者:Zhiping Zhou(zjzhou@pku.edu.cn)

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引用该论文

Jishi Cui, Bowen Bai, Fenghe Yang, Zhiping Zhou, "Optical saturation characteristics of dual- and single-injection Ge-on-Si photodetectors," Chinese Optics Letters 16(7), 072502 (2018)

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