Photonics Research, 2018, 6 (8): 08000776, Published Online: Aug. 1, 2018   

Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Download: 697次

Author Affiliations
1 Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA
2 Institute of Innovative Research, Tokyo Institute of Technology, Tokyo 152-8552, Japan
3 Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
4 Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA
Abstract
Microring lasers feature ultralow thresholds and inherent wavelength-division multiplexing functionalities, offering an attractive approach to miniaturizing photonics in a compact area. Here, we present static and dynamic properties of microring quantum dot lasers grown directly on exact (001) GaP/Si. Effectively, a single-mode operation was observed at 1.3 μm with modes at spectrally distant locations. High temperature stability with T0103 K has been achieved with a low threshold of 3 mA for microrings with an outer ring radius of 15 μm and a ring waveguide width of 4 μm. Small signal modulation responses were measured for the first time for the microrings directly grown on silicon, and a 3 dB bandwidth of 6.5 GHz was achieved for a larger ring with an outer ring radius of 50 μm and a ring waveguide width of 4 μm. The directly modulated microring laser, monolithically integrated on a silicon substrate, can incur minimal real estate cost while offering full photonic functionality.

Yating Wan, Daisuke Inoue, Daehwan Jung, Justin C. Norman, Chen Shang, Arthur C. Gossard, John E. Bowers. Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability[J]. Photonics Research, 2018, 6(8): 08000776.

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