首页 > 论文 > Photonics Research > 6卷 > 8期(pp:794-799)

Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys

  • 摘要
  • 论文信息
  • 参考文献
  • 被引情况
  • PDF全文
分享:

Abstract

Digital alloy In0.52Al0.48As avalanche photodiodes exhibit lower excess noise than those fabricated from random alloys. This paper compares the temperature dependence, from 203 to 323 K, of the impact ionization characteristics of In0.52Al0.48As and Al0.74Ga0.26As digital and random alloys. These results provide insight into the low excess noise exhibited by some digital alloy materials, and these materials can even obtain lower excess noise at low temperature.

Newport宣传-MKS新实验室计划
补充资料

DOI:10.1364/prj.6.000794

基金项目:Defense Advanced Research Projects Agency (DARPA)10.13039/100000185 (W911NF-10-1-0391); Army Research Office (ARO)10.13039/100000183 (W911NF-10-1-0391).

收稿日期:2018-04-17

录用日期:2018-06-01

网络出版日期:2018-06-08

作者单位    点击查看

Yuan Yuan:Electrical and Computer Engineering Department, University of Virginia, 351 McCormick Rd., Charlottesville, Virginia 22904, USA
Jiyuan Zheng:Electrical and Computer Engineering Department, University of Virginia, 351 McCormick Rd., Charlottesville, Virginia 22904, USA
Yaohua Tan:Electrical and Computer Engineering Department, University of Virginia, 351 McCormick Rd., Charlottesville, Virginia 22904, USA
Yiwei Peng:Electrical and Computer Engineering Department, University of Virginia, 351 McCormick Rd., Charlottesville, Virginia 22904, USA
Ann-Kathryn Rockwell:Electrical and Computer Engineering Department, University of Texas at Austin, 1616 Guadalupe St., Austin, Texas 78758, USA
Seth R. Bank:Electrical and Computer Engineering Department, University of Texas at Austin, 1616 Guadalupe St., Austin, Texas 78758, USA
Avik Ghosh:Electrical and Computer Engineering Department, University of Virginia, 351 McCormick Rd., Charlottesville, Virginia 22904, USA
Joe C. Campbell:Electrical and Computer Engineering Department, University of Virginia, 351 McCormick Rd., Charlottesville, Virginia 22904, USA

联系人作者:Joe C. Campbell(jccuva@virginia.edu)

【1】J. C. Campbell, “Recent advances in avalanche photodiodes,” J. Lightwave Technol. 34 , 278–285 (2016).

【2】R. J. McIntyre, “Multiplication noise in uniform avalanche photodiodes,” IEEE Trans. Electron. Devices ED-13 , 164–168 (1966).

【3】R. B. Emmons, “Avalanche‐photodiode frequency response,” J. Appl. Phys. 38 , 3705–3714 (1967).

【4】M. E. Woodson, M. Ren, S. J. Maddox, Y. Chen, S. R. Bank, and J. C. Campbell, “Low-noise AlInAsSb avalanche photodiode,” Appl. Phys. Lett. 108 , 081102 (2016).

【5】M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell, “AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes,” Appl. Phys. Lett. 108 , 191108 (2016).

【6】M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell, “Low excess noise AlxIn1-xAsySb1-y (x: 0.3–0.7) avalanche photodiodes,” in Conference on Lasers and Electro-Optics (CLEO) (IEEE, 2016), paper?STh1G.1.

【7】A. K. Rockwell, Y. Yuan, A. H. Jones, S. D. March, S. R. Bank, and J. C. Campbell, “Al0.8In0.2As0.23Sb0.77 avalanche photodiodes,” IEEE Photon. Technol. Lett. 30 , 1048–1051 (2018).

【8】C. Lenox, P. Yuan, H. Nie, O. Baklenov, C. Hansing, J. C. Campbell, A. L. Holmes, and B. G. Streetman, “Thin multiplication region InAlAs homojunction avalanche photodiodes,” Appl. Phys. Lett. 73 , 783–784 (1998).

【9】Y. L. Goh, A. R. J. Marshall, D. J. Massey, J. S. Ng, C. H. Tan, M. Hopkinson, J. P. R. David, S. K. Jones, C. C. Button, and S. M. Pinches, “Excess avalanche noise in In0.52Al0.48As,” IEEE J. Quantum Electron. 43 , 503–507 (2007).

【10】N. Li, R. Sidhu, X. Li, F. Ma, X. Zheng, S. Wang, G. Karve, S. Demiguel, A. L. Holmes, and J. C. Campbell, “InGaAs/InAlAs avalanche photodiode with undepleted absorber,” Appl. Phys. Lett. 82 , 2175–2177 (2003).

【11】F. Capasso, R. E. Nahory, M. A. Pollack, and T. P. Pearsall, “Observation of electronic band-structure effects on impact ionization by temperature tuning,” Phys. Rev. Lett. 39 , 723–726 (1977).

【12】F. Osaka, and T. Mikawa, “Low‐temperature characteristics of electron ionization rates in (100)‐ and (111)‐oriented InP,” J. Appl. Phys. 58 , 4426–4430 (1985).

【13】K. Taguchi, T. Torikai, Y. Sugimoto, K. Makita, and H. Ishihara, “Temperature dependence of impact ionization coefficients in InP,” J. Appl. Phys. 59 , 476–481 (1986).

【14】D. J. Massey, J. P. R. David, and G. J. Rees, “Temperature dependence of impact ionization in submicrometer silicon devices,” IEEE Trans. Electron. Dev. 53 , 2328–2334 (2006).

【15】S. J. Maddox, S. D. March, and S. R. Bank, “Broadly tunable AlInAsSb digital alloys grown on GaSb,” Cryst. Growth Des. 16 , 3582–3586 (2016).

【16】X. G. Zheng, “Long-wavelength, high-speed avalanche photodiodes and APD arrays ,” Ph.D. dissertation (University of Texas at Austin, 2004).

【17】Y. Tan, M. Povolotskyi, T. Kubis, T. B. Boykin, and G. Klimeck, “Transferable tight-binding model for strained group IV and III-V materials and heterostructures,” Phys. Rev. B 94 , 045311 (2016).

【18】X. G. Zheng, P. Yuan, X. Sun, G. S. Kinsey, A. L. Holmes, B. G. Streetman, and J. C. Campbell, “Temperature dependence of the ionization coefficients of AlxGa1-xAs,” IEEE J. Quantum Electron. 36 , 1168–1173 (2000).

【19】C. N. Harrison, J. P. R. David, M. Hopkinson, and G. J. Rees, “Temperature dependence of avalanche multiplication in submicron Al0.6Ga0.4As diodes,” J. Appl. Phys. 92 , 7684–7686 (2002).

【20】F. Capasso, “Physics of avalanche photodiodes,” Semicond. Semimetals 22 , 1–172 (1985).

引用该论文

Yuan Yuan, Jiyuan Zheng, Yaohua Tan, Yiwei Peng, Ann-Kathryn Rockwell, Seth R. Bank, Avik Ghosh, and Joe C. Campbell, "Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys," Photonics Research 6(8), 794-799 (2018)

您的浏览器不支持PDF插件,请使用最新的(Chrome/Fire Fox等)浏览器.或者您还可以点击此处下载该论文PDF