红外技术, 2018, 40 (7): 668, 网络出版: 2018-08-04
长波碲镉汞材料表面的氢化处理研究
Study on the Hydrogenation Treatment of Long Wavelength HgCdTe Material Surface
长波碲镉汞 氢化处理 界面电学特性 焦平面器件测试 long wavelength HgCdTe hydrogenation AFM AFM interface electrical characteristic I-V I-V focal plane device test
摘要
本文基于ICP 方法对长波HgCdTe 材料表面进行了氢化处理,首次在同一焦平面器件上实现了氢化工艺效果的对比。利用原子力显微镜(AFM)、低温探针台系统和焦平面测试系统对HgCdTe 材料表面微观形貌及相关器件的电学特性进行了表征分析,结果表明:对长波HgCdTe 材料表面进行氢化处理能有效降低MIS 器件的界面态、改善二极管器件性能,同时能够增大焦平面器件的信号响应度、减小盲元率。该研究对改善长波HgCdTe/钝化层的界面态以及提高长波HgCdTe 器件性能提供了依据。
Abstract
For the first time, a comparison, on the same focal plane device, of the hydrogenation effect of inductively coupled plasma surface (ICP) hydrogenated long-wavelength-HgCdTe has been carried out. The microstructure of the HgCdTe surface and the electrical characteristics of its related devices were determined by AFM, low-temperature-probe, and focal-plane-test systems. The results show that the ICP hydrogenation of the long-wavelength-HgCdTe surface can reduce the interface state of the metal-insulator-semiconductor (MIS) devices, improve the performance of the diodes, increase the signal-response degree, and reduce the blind pixel rate of focal plane devices. This study provides a basis for improving the interface state and passivation layer of long-wavelength HgCdTe, thus enhancing the device performance.
林占文, 韩福忠, 耿松, 李雄军, 史琪, 王海澎, 王向前, 蒋俊. 长波碲镉汞材料表面的氢化处理研究[J]. 红外技术, 2018, 40(7): 668. 林占文, 韩福忠, 耿松, 李雄军, 史琪, 王海澎, 王向前, 蒋俊. Study on the Hydrogenation Treatment of Long Wavelength HgCdTe Material Surface[J]. Infrared Technology, 2018, 40(7): 668.