光学技术, 2018, 44 (4): 495, 网络出版: 2018-08-30  

模拟研究p型a-Si∶H对HIT太阳电池性能的影响

Simulation Study of Influences of p-type a-Si∶H on the performance of HIT Solar Cells
作者单位
运城学院 物理与电子工程系 , 山西 运城 044000
摘要
使用AFORS-HET软件模拟研究HIT太阳电池能带结构, 讨论了发射区p型反转层的形成及影响因素, 及其对电池性能的影响。结果表明: 在n型单晶硅内, 与p型非晶硅异质结界面处, 形成p型反转层;p-Si∶H的掺杂浓度可调节费米能级位置, 进而影响反转层的形成。HIT电池类似于p-n同质结电池, p型反转层作为太阳电池发射层, 对太阳电池的性能起决定性作用。
Abstract
The HIT solar cell was analyzed and designed with AFORS-HET simulation method. According to its energy band structure, it is found that a p-type inversion layer is produced in the n-type crystal silicon (c-Si) near the front heterojunction interface. The constitution of the p-type inversion layer is adjusted by the Fermi level of the p-type hydrogenated amorphous silicon (a-Si∶H) layer, which can be controlled by changing its doping level. The HIT solar cell virtually acts like a p-n homojunction solar cell and p-type inversion layer functions as the cell emitter, which dominates the performance of the solar cell.

张喜生, 晏春愉, 李霖峰, 吴体辉, 郭俊华, 姚陈忠. 模拟研究p型a-Si∶H对HIT太阳电池性能的影响[J]. 光学技术, 2018, 44(4): 495. ZHANG Xisheng, YAN Chunyu, LI Linfeng, WU Tihui, GUO Junhua, YAO Chenzhong. Simulation Study of Influences of p-type a-Si∶H on the performance of HIT Solar Cells[J]. Optical Technique, 2018, 44(4): 495.

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