为研制符合高线性大功率的应变多量子阱激光器，文章在理论上计算了应变补偿，实验选用了金属有机物化学气相沉淀(MOCVD)工艺来研制生长AlGaInAs应变补偿多量子阱结构，最终有源区采用了7组张压应变交替的势垒和势阱层。激光器样本芯片采用共面电极结构，使得激光器的工作电流无需通过衬底，从而降低了激光器工作电容，其电容与传统激光器相比得到相应地减小，提高了激光器的光电特性。实验室制作出了应变多量子阱激光器样本芯片，光荧光分析得出光致发光谱，激射波长为1 304 nm；阈值电流为Ith≤9 mA；单面斜率效率为0.44 W/A。测试结果表明该器件有良好的性能参数。

In order to develop a strain high Multiple Quantum Well (MQW) laser with high linearity and high power, the strain compensation is theoretically calculated. Metal Organic Chemical Vapor Deposition (MOCVD) process is used to develop the AlGaInAs strain compensated MQW structure. In the final active region, seven sets of tensional strain alternation potential barrier and well layer are used. Since the device adopts the structure of the coplanar electrode, the working current of the laser does not need to pass through the substrate, resulting the reduction of the operating capacitance of laser. The capacitance is reduced when compared with the conventional one and the photoelectric characteristic of the laser is improved. We also fabricate a sample of a strained MQW laser. The Photoluminescence (PL) spectra are obtained by fluorescence analysis. The lasing wavelength is 1 304 nm. The threshold current is Ith ≤9 mA. The slope efficiency of one side is 0.44 W / A. Test results indicate the device has good performance parameters, which has the characteristics of high linearity and high power.