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基底温度和离子源能量对薄膜应力的影响

Effects of Substrate Temperature and Ion Source Energy on Stress of Thin Film

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摘要

在不同的基底温度和离子源能量下, 采用电子束蒸发方法在GaAs基底上分别制备了SiO2、TiO2和Al2O3光学薄膜。测量了所制备薄膜的表面应力, 并对不同离子源能量下薄膜的折射率进行了测试。结果表明, 三种光学薄膜的表面应力呈不均匀分布, 通过调节基底温度和离子源能量能有效减小薄膜应力, SiO2、TiO2和Al2O3薄膜的平均应力最小值分别为2.9, 8.4, 25.1 MPa。

Abstract

The optical thin films of SiO2, TiO2 and Al2O3 are prepared on GaAs substrates by using the electron beam evaporation method under different substrate temperatures and ion source energies, respectively. The stress distributions of these thin films are measured, and the refractive indexes of these thin films prepared under different ion source energies are also tested. The results show that, the surface stress distributions of these three kinds of thin films are non-uniform, and the substrate temperature and ion source energy can be adjusted to reduce the stresses of these thin films effectively. The average minimum stresses of SiO2, TiO2 and Al2O3 thin films are 2.9, 8.4 and 25.1 MPa, respectively.

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中图分类号:TB43

DOI:10.3788/lop55.093101

所属栏目:薄膜

基金项目:2017年科技创新服务能力建设-科研基地建设-重点实验室-光电子技术教育部重点实验室(市级)项目(PXM2017_014204_500034)

收稿日期:2018-03-05

修改稿日期:2018-04-06

网络出版日期:2018-04-18

作者单位    点击查看

郝帅:北京工业大学信息学部光电子技术省部共建教育部重点实验室, 北京 100124
崔碧峰:北京工业大学信息学部光电子技术省部共建教育部重点实验室, 北京 100124
房天啸:北京工业大学信息学部光电子技术省部共建教育部重点实验室, 北京 100124
王阳:北京工业大学信息学部光电子技术省部共建教育部重点实验室, 北京 100124

联系人作者:郝帅(18810360722@163.com); 崔碧峰(cbf@bjut.edu.cn);

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引用该论文

Hao Shuai,Cui Bifeng,Fang Tianxiao,Wang Yang. Effects of Substrate Temperature and Ion Source Energy on Stress of Thin Film[J]. Laser & Optoelectronics Progress, 2018, 55(9): 093101

郝帅,崔碧峰,房天啸,王阳. 基底温度和离子源能量对薄膜应力的影响[J]. 激光与光电子学进展, 2018, 55(9): 093101

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