采用高温固相法合成了BaSi2O2N2∶Eu2+蓝绿色荧光粉, 在440~460 nm蓝光激发下, 该荧光粉发射峰值波长488 nm的蓝绿色光。通过共掺杂微量Mg2+和Ge4+离子, BaSi2O2N2∶Eu2+蓝绿色荧光粉的热猝灭性能显著提升。在蓝光芯片激发下, 使用BaSi2O2N2∶Eu2+蓝绿色荧光粉搭配Y3(Al,Ga)5O12∶Ce3+黄绿色荧光粉以及CaAlSiN3∶Eu2+红色荧光粉, 可以封装色温6 500 K、显色指数Ra达到96.5、所有特殊显色指数R1~R15都大于90的全光谱白光LED。通过封装老化测试, Mg2+和Ge4+离子掺杂的BaSi2O2N2∶Eu2+蓝绿色荧光粉较未掺杂的荧光粉老化性能提升近1倍。

BaSi2O2N2∶Eu2+ blue-green phosphor was synthesized by high temperature solid-state method. Under the excitation of blue light, BaSi2O2N2∶Eu2+ phosphor emits blue-green light with peak wavelength at 488 nm. Co-doped with Mg2+ and Ge4+ ions, the thermal quenching property of BaSi2O2N2∶Eu2+ was significantly improved, which helps to improve the aging performance of WLED. By using BaSi2O2N2∶Eu2+ blue-green phosphor, Y3 (Al, Ga)5O12∶Ce3+ yellow-green phosphor and CaAlSiN3∶Eu2+ red phosphors, the Ra of the blue-chip based WLED reaches 96.5, and all the special color rendering indices (R1-R15) of the WLED are over 90, which meet the requirements of full spectrum WLED lighting.