为了探究聚合物结构与性能的关系, 获得电子传输型半导体材料。采用Stille交叉偶联反应, 制备了基于噻吩-氰基乙烯-噻吩(TCNT)和2-氧吲哚-3-亚基-二氢吡咯吲哚-二酮(BDID)结构的一种新型的低能带隙给体-受体共轭聚合物PBDID-TCNT。采用热重分析仪、示差扫描量热仪、紫外-可见-近红外分光光度计、电化学工作站与原子力显微镜等测试手段对聚合物的热性能、光学性能、电化学性能以及微观结构进行了表征。结果表明: 聚合物PBDID-TCNT具有优异的热稳定性, 宽的吸收光谱, 低的最低未占轨道/最高占有轨道能级(LUMO/HOMO)。首次制得了PBDID-TCNT型的聚合物, 以聚合物为半导体层的有机薄膜晶体管器件展现出电子传输特性, 电子迁移率达到0.11 cm2/(V·s), 同时开关比超过105。

A novel low bandgap donor-acceptor conjugated polymer (PBDID-TCNT) was prepared by Stille cross-coupling reaction to explore the relationship between polymer structure and performance and obtain electron transport type semiconductor material. The thermal, optical, electrochemical properties, and microstructures were investigated using thermogravimetric (TG), different scanning calorimetry (DSC), ultraviolet-visible-near infrared spectrometer (UV-Vis-NIR), cyclic voltammetry (CV)and atomic force microscope (AFM). The polymer has excellent thermal stability, broad absorption spectra, deep-lying lowest unoccupied molecular orbital (LUMO) energy level and low highest occupied molecular orbital (HOMO) energy level. For the first time, a PBDID-TCNT type polymer was obtained. And the organic thin-film transistors (OTFTs) were also fabricated using the new polymer as the semiconductor layer with bottom gate/top contact configuration. The devices provided high electron mobility up to 0.11 cm2/(V·s) under vacuum condition and the Ion/Ioff ratio over 105.