光学学报, 2018, 38 (9): 0927001, 网络出版: 2019-05-09   

有限厚度拓扑绝缘体平板附近原子的自发辐射特性 下载: 695次

Spontaneous Emission Characteristics of Atoms near Topological Insulator Slab with Finite Thickness
作者单位
1 杭州电子科技大学通信工程学院, 浙江 杭州 310018
2 同济大学物理科学与工程学院先进微结构材料教育部重点实验室, 上海 200092
摘要
对有限厚度拓扑绝缘体(TI)平板附近及其腔内二能级原子的自发辐射特性进行了研究。利用并矢格林函数表示偶极子平行和垂直于材料边界时的自发辐射率表达式,通过多次反射理论计算了平板的反射矩阵,对影响自发辐射率的各种因素进行了数值计算与分析。研究结果表明,忽略耗散时,平行偶极子的自发辐射率被抑制,而垂直偶极子的被增强;当板或腔存在耗散时,TI可以有效抑制原子的自发辐射率,使其附近原子在任何偶极方向的衰减均受到抑制。
Abstract
The spontaneous emission properties of the two-level atoms placed near a topological insulator (TI) slab with a finite thickness or inside its cavity are investigated. The spontaneous emission rates of the dipole parallel or perpendicular to the material boundary are expressed via the dyadic Green function. The reflection matrix of this slab is calculated based on the multiple reflection theory, and the various factors which influence the spontaneous emission rate are numerically calculated and analyzed. The research results show that, when the dissipation is ignored, the spontaneous emission rate of the parallel dipole is suppressed, however, that of the perpendicular dipole is enhanced. When the dissipation of the slab or its cavity is included, the TI can effectively suppress the spontaneous emission rate of the atoms and make all of the decays of atoms near it along any diploe directions suppressed.

曾然, 侯金鑫, 王驰, 李齐良, 毕美华, 杨国伟, 羊亚平. 有限厚度拓扑绝缘体平板附近原子的自发辐射特性[J]. 光学学报, 2018, 38(9): 0927001. Ran Zeng, Jinxin Hou, Chi Wang, Qiliang Li, Meihua Bi, Guowei Yang, Yaping Yang. Spontaneous Emission Characteristics of Atoms near Topological Insulator Slab with Finite Thickness[J]. Acta Optica Sinica, 2018, 38(9): 0927001.

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