红外与激光工程, 2018, 47 (9): 0920006, 网络出版: 2018-10-06  

γ射线辐照对130 nm部分耗尽SOI MOS器件栅氧经时击穿可靠性的影响

Effects of time-dependent dielectric breakdown reliability of 130 nm partially depleted SOI MOS devices exposed to γ-ray
马腾 1,2,3苏丹丹 1,2,3周航 1,2,3郑齐文 1,2崔江维 1,2魏莹 1,2余学峰 1,2郭旗 1,2
作者单位
1 中国科学院新疆理化技术研究所 中国科学院特殊环境功能材料与器件重点实验室, 新疆 乌鲁木齐 830011
2 新疆电子信息材料与器件重点实验室, 新疆 乌鲁木齐 830011
3 中国科学院大学, 北京 100049
摘要
研究了γ射线辐照对130 nm部分耗尽(Partially Depleted, PD)绝缘体上硅(Silicon on Insulator, SOI)工艺MOS器件栅氧经时击穿(Time-Dependent Dielectric Breakdown, TDDB)寿命的影响。通过测试和对比辐照前后NMOS和PMOS器件的转移特性曲线、阈值电压、关态泄漏电流以及TDDB时间等电参数, 分析了γ射线辐照对PD-SOI MOS器件TDDB可靠性的影响。结果表明: 由于γ射线辐照在栅极氧化层中产生了带正电的氧化物陷阱电荷, 影响了器件内部势垒的分布, 降低了电子跃迁的势垒高度, 导致了电子遂穿的正反馈作用增强, 从而缩短了器件栅氧化层经时击穿时间, 最终造成器件栅极氧化层的可靠性下降。
Abstract
The effects of γ-ray irradiation on the subsequent time-dependent dielectric breakdown (TDDB) of partially depleted (PD) silicon-on-insulator (SOI) MOS devices were investigated. By testing and comparing the transfer characteristic curves, threshold voltage, off-state leakage current, the TDDB lifetimes and other electrical parameters of the NMOS and PMOS devices before and after irradiation, the effects of γ-ray irradiation on the TDDB reliability of the devices were analyzed. The results show that the positively charged oxide trap charges induced by γ-ray irradiation in the gate oxide layer affected the distribution of the internal barrier of the device, and reduced the height of the barrier of the electron transition. Therefore, the positive feedback effect of electron tunneling is enhanced and the TDDB lifetime of the device is reduced, resulting in a reliability degradation of the gate oxide of the devices.

马腾, 苏丹丹, 周航, 郑齐文, 崔江维, 魏莹, 余学峰, 郭旗. γ射线辐照对130 nm部分耗尽SOI MOS器件栅氧经时击穿可靠性的影响[J]. 红外与激光工程, 2018, 47(9): 0920006. Ma Teng, Su Dandan, Zhou Hang, Zheng Qiwen, Cui Jiangwei, Wei Ying, Yu Xuefeng, Guo Qi. Effects of time-dependent dielectric breakdown reliability of 130 nm partially depleted SOI MOS devices exposed to γ-ray[J]. Infrared and Laser Engineering, 2018, 47(9): 0920006.

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