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溶液法制备氧化锡薄膜及光学特性研究

Fabrication and Optical Properties of Tin Oxide Thin Films by Solution Process

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摘要

采用五水合氯化锡配制前驱体溶液,通过旋涂法在玻璃基底上制备了一种可见光平均透射率在90%以上的氧化锡透明薄膜。研究发现,对玻璃基底进行等离子预处理有助于改善氧化锡薄膜的表面质量。当等离子处理功率为25 W时,薄膜表面质量最佳。在低于500 ℃下,升高退火温度不仅可减少薄膜中的有机成分残留,而且可在不改变薄膜物相的情况下增大薄膜的光学带隙。退火温度为500 ℃时,薄膜开始发生由非晶到多晶的转变。

Abstract

The transparent tin oxide thin films with an average transmissivity larger than 90% are fabricated on the glass substrates by the spin-coating method with SnCl4·5H2O as the source material of the precursor solution. The research results show that, the plasma pre-treatment to glass substrates is helpful to improve the surface quality of the tin oxide films and the best surface quality is obtained when the plasma treatment power is 25 W. The increase of the annealing temperature kept below 500 ℃ can not only reduce the residue of organic components but also increase the thin film band gap under the condition that the thin film phase compositions do not change. When the annealing temperature increases to 500 ℃, the thin film phase composition changes from non-crystalline to polycrystalline.

Newport宣传-MKS新实验室计划
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中图分类号:O436

DOI:10.3788/aos201838.1031001

所属栏目:薄膜

基金项目:国家重点研发计划(2016YFF0203600)、国家级大学生创新创业训练计划(201710561056)、国家自然科学基金(51771074,51521002,U1601651)、国家重点基础研究发展计划(2015CB655004)、广东省自然科学基金(2016A030313459,2017A030310028)、广东省科技计划项目(2016B090907001,2016A040403037,2016B090906002,2017A050503002)、广州科技计划(201804020033)

收稿日期:2018-04-04

修改稿日期:2018-05-07

网络出版日期:2018-05-15

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王佳良:华南理工大学材料科学与工程学院高分子光电材料与器件研究所发光材料与器件国家重点实验室, 广东 广州 510640
刘贤哲:华南理工大学材料科学与工程学院高分子光电材料与器件研究所发光材料与器件国家重点实验室, 广东 广州 510640
邓宇熹:华南理工大学材料科学与工程学院高分子光电材料与器件研究所发光材料与器件国家重点实验室, 广东 广州 510640
袁炜键:华南理工大学材料科学与工程学院高分子光电材料与器件研究所发光材料与器件国家重点实验室, 广东 广州 510640
周尚雄:华南理工大学材料科学与工程学院高分子光电材料与器件研究所发光材料与器件国家重点实验室, 广东 广州 510640
张啸尘:华南理工大学材料科学与工程学院高分子光电材料与器件研究所发光材料与器件国家重点实验室, 广东 广州 510640
姚日晖:华南理工大学材料科学与工程学院高分子光电材料与器件研究所发光材料与器件国家重点实验室, 广东 广州 510640
宁洪龙:华南理工大学材料科学与工程学院高分子光电材料与器件研究所发光材料与器件国家重点实验室, 广东 广州 510640
彭俊彪:华南理工大学材料科学与工程学院高分子光电材料与器件研究所发光材料与器件国家重点实验室, 广东 广州 510640

联系人作者:姚日晖(yaorihui@scut.edu.cn); 王佳良(302664468@qq.com);

【1】Fortunato E, Barquinha P, Martins R. Oxide semiconductor thin-film transistors: A review of recent advances[J]. Advanced Materials, 2012, 24(22): 2945-2986.

【2】Depp S W, Juliana A, Huth B G. Polysilicon FET devices for large area input/output applications[C]. International electron devices meeting, 1980: 703-706.

【3】Yuan Z J, Lou Q H, Zhou J, et al. Flat-top green laser crystallization of amorphous silicon thin film[J]. Chinese Journal of Lasers, 2009, 36(1): 205-209.
袁志军, 楼祺洪, 周军, 等. 平顶绿光晶化制备多晶硅薄膜[J]. 中国激光, 2009, 36(1): 205-209.

【4】Yin G Y, You L B, Wang Q S, et al. Line beam shaping system for preparation of low temperature poly-silicon[J]. Chinese Journal of Lasers, 2017, 44(9): 0906002.
尹广玥, 游利兵, 王庆胜, 等. 用于低温多晶硅制备的线光束整形系统[J]. 中国激光, 2017, 44(9): 0906002.

【5】Hosono H, Yasukawa M, Kawazoe H. Novel oxide amorphous semiconductors: Transparent conducting amorphous oxides[J]. Journal of Non-Crystalline Solids, 1996, 203: 334-344.

【6】Hoffman R L, Norris B J, Wager J F. ZnO-based transparent thin-film transistors[J]. Applied Physics Letters, 2003, 82(5): 733-735.

【7】Choi H S, Jeon S, Kim H, et al. The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility[J]. Applied Physics Letters, 2012, 100(17): 173501.

【8】Li X F. Stability of low temperature and transparent amorphous InGaZnO thin film transistor under illumination[J]. Acta Physica Sinica, 2013, 62(10): 956-959.

【9】Ji Z G, He Z J, Song Y L. Preparation and characterization of in_doped p-type SnO2 thin films by sol-gel dip-coating[J]. Acta Physica Sinica, 2004, 53(12): 4330-4333.
季振国, 何振杰, 宋永梁. p型导电掺In的SnO2薄膜的制备及表征[J]. 物理学报, 2004, 53(12): 4330-4333.

【10】Racheva T M, Critchlow G W. SnO2, thin films prepared by the sol-gel process[J]. Thin Solid Films, 1997, 292(1/2): 299-302.

【11】Furusaki T, Takahashi J, Takaha H, et al. Formation process of SnO2 thin films by sol-gel method[J]. Journal of the Ceramic Society of Japan, 1993, 101(1172): 451-455.

【12】Murali Babu B, Vadivel S. High performance humidity sensing properties of indium tin oxide (ITO) thin films by sol-gel spin coating method[J]. Journal of Materials Science: Materials in Electronics, 2017, 28(3): 2442-2447.

【13】Kadhim I H, Hassan H A. Room temperature hydrogen gas sensor based on nanocrystalline SnO2, thin film using sol-gel spin coating technique[J]. Journal of Materials Science Materials in Electronics, 2016, 27(5): 4356-4362.

【14】Liu X Z, Ning H L, Chen J Q, et al. High-performance back-channel-etched thin-film transistors with amorphous Si-incorporated SnO2 active layer[J]. Applied Physics Letters, 2016, 108(11): 1245-1246.

【15】Zhao M J, Lan L F, Xu H, et al. Wet-etch method for patterning metal electrodes directly on amorphous oxide semiconductor films[J]. ECS Solid State Letters, 2012, 1(5): P82-P84.

【16】Luo D X, Zhao M J, Xu M, et al. Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer[J]. ACS Applied Materials & Interfaces, 2014, 6(14): 11318-11325.

【17】Norris B J, Anderson J, Wager J F, et al. Spin-coated zinc oxide transparent transistors[J]. Journal of Physics D: Applied Physics, 2003, 36(20): L105-L107.

【18】Niederberger M, Garnweitner G, Buha J, et al. Nonaqueous synthesis of metal oxide nanoparticles: Review and indium oxide as case study for the dependence of particle morphology on precursors and solvents[J]. Journal of Sol-Gel Science and Technology, 2006, 40(2/3): 259-266.

【19】Smith J, Zeng L, Khanal R, et al. Cation size effects on the electronic and structural properties of solution-processed in-X-O thin films[J]. Advanced Electronic Materials, 2015, 1(7): 1500146.

【20】Jan H E, Hoang H, Nakamura T, et al. Amorphous in-Si-O films fabricated via solution processing[J]. Journal of Electronic Materials, 2017, 46(6): 3610-3614.

【21】Park S, Kim C H, Lee W J, et al. Sol-gel metal oxide dielectrics for all-solution-processed electronics[J]. Materials Science and Engineering: R: Reports, 2017, 114: 1-22.

【22】Xiao D Q, Zhu J G, Zhu J L, et al. Thin film physics and devices[M]. Beijing: National Defense Industry Press, 2011.
肖定全, 朱建国, 朱基亮, 等. 薄膜物理与器件[M]. 北京: 国防工业出版社, 2011.

【23】Liu N L, Ai N, Hu D G, et al. Effect of spin-coating process on the performance of passive-matrix organic light-emitting display[J]. Acta Physica Sinica, 2011, 60(8): 679-684.
刘南柳, 艾娜, 胡典钢, 等. 旋涂方式对有机发光显示屏发光均匀性及性能的影响[J]. 物理学报, 2011, 60(8): 679-684.

【24】Zhang W Q, Zhen Y, Ma N, et al. Organic chemistry[M]. Shanghai: Higher Education Press, 2011.
张文勤, 郑艳, 马宁, 等. 有机化学[M]. 上海: 高等教育出版社, 2011.

【25】Yao R H, Zheng Z K, Zeng Y, et al. Preparation of Al2O3 dielectric layers at room temperature based on flexible displays[J]. Acta Optica Sinica, 2017, 37(3): 0331001.
姚日晖, 郑泽科, 曾勇, 等. 基于柔性显示器件的氧化铝介电层室温制备[J]. 光学学报, 2017, 37(3): 0331001.

【26】Hou H H, Zhang T, Wang B, et al. Effects of annealing time on the structure and optical properties of aluminum-doped zinc oxide thin films[J]. Acta Optica Sinica, 2015, 35(s1): s131001.
侯海虹, 张涛, 王斌, 等. 退火时间对AZO薄膜结构及光学性质的影响[J]. 光学学报, 2015, 35(s1): s131001.

【27】Sun X L, Chen P H, Zhou L, et al. Effect of polyethylene glycol on microstructure and self-cleaning properties of titanium dioxide films[J]. Acta Optica Sinica, 2018, 38(1): 0116001.
孙喜莲, 陈鹏辉, 周浪, 等. 聚乙二醇对二氧化钛薄膜结构及其自清洁性能的影响[J]. 光学学报, 2018, 38(1): 0116001.

【28】Akgul F A, Gumus C, Er A O, et al. Structural and electronic properties of SnO2[J]. Journal of Alloys and Compounds, 2013, 579: 50-56.

【29】Tang M, Li Y N, Yin B, et al. Influence of hydrogen peroxide on optical properties of a-IGZO thin films by solution process[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(12): 1124-1130.
汤猛, 李勇男, 殷波, 等. H2O2对溶液法制备a-IGZO薄膜光学特性的影响[J]. 液晶与显示, 2016, 31(12): 1124-1130.

【30】Wang J, Wang Z, Huang B, et al. Oxygen vacancy induced band-gap narrowing and enhanced visible light photocatalytic activity of ZnO[J]. Acs Applied Materials & Interfaces, 2012, 4(8): 4024.

引用该论文

Wang Jialiang,Liu Xianzhe,Deng Yuxi,Yuan Weijian,Zhou Shangxiong,Zhang Xiaochen,Yao Rihui,Ning Honglong,Peng Junbiao. Fabrication and Optical Properties of Tin Oxide Thin Films by Solution Process[J]. Acta Optica Sinica, 2018, 38(10): 1031001

王佳良,刘贤哲,邓宇熹,袁炜键,周尚雄,张啸尘,姚日晖,宁洪龙,彭俊彪. 溶液法制备氧化锡薄膜及光学特性研究[J]. 光学学报, 2018, 38(10): 1031001

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