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多晶硅表面皮秒激光阵列孔绒面制备

Fabrication of Array Pores on Polysilicon Surface by Picosecond Laser

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摘要

为了减小多晶硅表面的反射率, 采用皮秒激光在多晶硅片表面制备阵列孔绒面, 分析了激光参数对制绒深度的作用机理, 优选出实验参数:激光功率为15 W, 脉冲频率为25 kHz, 扫描速度为0.9 m/s, 扫描次数为2。利用优选参数验证了制绒孔距对多晶硅片表面反射率的影响, 并通过PC1D软件模拟出不同制绒硅片的开路电压和短路电流。结果表明, 当孔距为30 μm时, 多晶硅表面形成的孔最为紧密, 形貌最好, 其孔密度为1.17×105 counts·cm-2, 表面反射率为6.95%, 多晶硅电池光-电转化效率提升至18.45%。

Abstract

In order to reduce the reflectivity of polysilicon surface, a picosecond laser is adopted to fabricate array pores on the polysilicon surface. The action mechanism of each laser parameter on the texturing depth is analyzed and the optimal experimental parameters with laser power of 15 W, pulse frequency of 25 kHz, scanning speed of 0.9 m/s and scanning times of 2 are chosen. Based on these optimal parameters, the influence of textured pore pitch on the polysilicon surface reflectivity is verified, and the open-circuit voltage and the short-circuit current of different textured silicon wafers are simulated by the PC1D software. The results show that, there exist the most compact pores with the best morphology on the polysilicon surface when the pore pitch is 30 μm. The pore density is 1.17×105 counts·cm-2, the surface reflectivity is 6.95% and the photoelectric conversion efficiency of the polysilicon battery is increased to 18.45%.

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中图分类号:TN249

DOI:10.3788/cjl201845.1002002

所属栏目:激光制造

基金项目:国家自然科学基金(51505236)

收稿日期:2018-04-02

修改稿日期:2018-05-08

网络出版日期:2018-05-22

作者单位    点击查看

贾天代:温州大学机电工程学院, 浙江 温州 325035
冯爱新:温州大学机电工程学院, 浙江 温州 325035
陈欢:温州大学机电工程学院, 浙江 温州 325035
刘勇:温州大学机电工程学院, 浙江 温州 325035

联系人作者:冯爱新(aixfeng@126.com); 贾天代(807174790@qq.com);

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引用该论文

Jia Tiandai,Feng Aixin,Chen Huan,Liu Yong. Fabrication of Array Pores on Polysilicon Surface by Picosecond Laser[J]. Chinese Journal of Lasers, 2018, 45(10): 1002002

贾天代,冯爱新,陈欢,刘勇. 多晶硅表面皮秒激光阵列孔绒面制备[J]. 中国激光, 2018, 45(10): 1002002

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