红外与毫米波学报, 2018, 37 (6): 679, 网络出版: 2018-12-26  

InAs/AlSb 异质结的Pd/Ti/Pt/Au 合金化欧姆接触

Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer
作者单位
1 西安电子科技大学 宽带隙半导体技术国家重点学科实验室, 陕西 西安 710071
2 中国科学院半导体研究所, 超晶格国家重点实验室, 北京 100083
摘要
为了得到较低的接触电阻, 研究了帽层未掺杂的InAs/AlSb 异质结的Pd/Ti/Pt/Au合金化欧姆接触.利用传输线模型(TLM)测量了接触电阻Rc.在最佳的快速热退火条件为275 °C和20 s时, InAs/AlSb 异质结的Pd/Ti/Pt/Au接触电阻值为0.128 Ω·mm.TEM观察发现经过快速热退火后Pd已经扩散到半导体中有利于高质量欧姆接触的形成.研究表明经过Pd/Ti/Pt/Au 合金化欧姆接触后Rc有明显减小, 适用于InAs / AlSb 异质结的应用.
Abstract
In order to achieve low contact resistances of InAs/AlSb heterostructures with the undoped InAs cap layer, Pd/Ti/Pt/Au alloyed ohmic contact has been investigated. The contact resistance Rc is evaluated by using transmission-line-model (TLM) measurements. A minimum of 0.128 Ω·mm has been obtained by using the optimal rapid thermal annealing (RTA) with the condition at temperature of 275 °C and annealing time of 20 s. The measurement from transmission electron microscopy (TEM) demonstrates that the Pd atoms diffuses into the semiconductor, which is beneficial to the formation of a high-quality ohmic contact during the rapid thermal annealing. This study shows that the contact resistance Rc is reduced significantly after Pd/Ti/Pt/Au alloyed ohmic contact, which is suitable for its application in InAs/AlSb heterostructures.

张静, 吕红亮, 倪海桥, 牛智川, 张义门, 张玉明. InAs/AlSb 异质结的Pd/Ti/Pt/Au 合金化欧姆接触[J]. 红外与毫米波学报, 2018, 37(6): 679. ZHANG Jing, LYU Hong-Liang, NI Hai-Qiao, NIU Zhi-Chuan, ZHANG Yi-Men, ZHANG Yu-Ming. Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer[J]. Journal of Infrared and Millimeter Waves, 2018, 37(6): 679.

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