利用改进的小信号模型对采用100 nm InAlAs/InGaAs/InP工艺设计实现的PHEMTs器件进行建模, 并设计实现了一款W波段单片低噪声放大器进行信号模型的验证。为了进一步改善信号模型低频S参数拟合差的精度, 该小信号模型考虑了栅源和栅漏二极管微分电阻, 在等效电路拓扑中分别用Rfs和Rfd表示.为了验证模型的可行性, 基于该信号模型研制了W波段低噪声放大器单片.在片测试结果表明：最大小信号增益为14.4 dB@92.5 GHz, 3 dB 带宽为25GHz@85-110 GHz.而且, 该放大器也表现出了良好的噪声特性, 在88 GHz处噪声系数为4.1 dB, 相关增益为13.8 dB.与同频段其他芯片相比, 该放大器单片具有宽3 dB带宽和高的单级增益.

This paper presents an improved small-signal model and a W-band monolithic low noise amplifier (LNA) using 100 nm InAlAs/InGaAs/InP-based high electron mobility transistors (HEMT) technology. For improving the fitting accuracy of S-parameters in low frequency, the small-signal model takes into account differential resistances of gate-to-source and gate-to-drain diodes, which modeled by resistances Rfs and Rfd. A W-band LNA monolithic millimeter-wave integrated circuit (MMIC) has been designed and fabricated based on this model to verify the feasibility of this model. The amplifier is measured on-wafer with a small-signal peak gain of 14.4 dB at 92.5 GHz and 3-dB bandwidth from 85 to 110 GHz. In addition, the MMIC also exhibits an excellent noise characteristic with the noise figure of 4.1 dB and the associate gain of 13.8 dB at 88 GHz. This MMIC amplifier shows wider 3-dB bandwidth and higher per-stage gain than others results at the similar band.