Frontiers of Optoelectronics, 2018, 11 (4): 360–366, 网络出版: 2019-01-10
High fill factor over 82% enabled by a biguanide doping electron transporting layer in planar perovskite solar cells
High fill factor over 82% enabled by a biguanide doping electron transporting layer in planar perovskite solar cells
摘要
Abstract
N-type doping in electron transport materials is an effective way to improve the electron collection and enhance the performance of the perovskite solar cells (PSCs). Here, for the first time, an antibiotic and antimicrobial compound of 1-(o-Tolyl) biguanide (oTb) is used to dope the electron transport material of phenyl-C61-butyric acid methyl ester (PCBM). The oTb doping into the PCBM can increase the conductivity and reduce the work function of the PCBM. The oTb doping can significantly enhance the fill factor (FF) of the perovskite solar cells with the structure of glass/ITO/NiOx/MAPbI3/(oTb)PCBM/(PEIE)/Ag. For the cells without PEIE (polyethylenimine ethoxylated) coating, the oTb doping increases the FF from 0.57 to 0.73. S-shaped of the current density-voltage (J-V) characteristic under illumination is removed after the oTb doping. For the cells with PEIE coating between the (oTb)PCBM and Ag, the oTb doping increases the FF from 0.70 to 0.82. These results show the potential of the oTb as an n-dopant in the applications of perovskite solar cells.
, , , , . High fill factor over 82% enabled by a biguanide doping electron transporting layer in planar perovskite solar cells[J]. Frontiers of Optoelectronics, 2018, 11(4): 360–366. Ru GE, Fei QIN, Lin HU, Sixing XIONG, Yinhua ZHOU. High fill factor over 82% enabled by a biguanide doping electron transporting layer in planar perovskite solar cells[J]. Frontiers of Optoelectronics, 2018, 11(4): 360–366.