光电子快报（英文版）, 2018, 14 (5): 342, Published Online: Apr. 16, 2019
1 550 nm long-wavelength vertical-cavity surface emit-ting lasers
Abstract
A 1 550 nm long-wavelength vertical cavity surface emitting laser (VCSEL) on InP substrate is designed and fabri-cated. The transfer matrix is used to compute reflectivity spectrum of the designed epitaxial layers. The epitaxial layers mainly consist of 40 pairs of n-AlxGayIn(1-x-y)As/InP, and 6 strain compensated AlxGayIn(1-x-y)As/InP quantum wells on n-InP substrate, respectively. The top distributed Bragg reflection (DBR) mirror system has been formed by fabricat-ing 4.5 pairs of SiO2/Si. The designed cavity mode is around 1 536 nm. The dip of the fabricated cavity mode is around 1 530 nm. The threshold current is 30 mA and the maximum output power is around 270 μW under CW opera-tion at room temperature.
LIU Li-jie, WU Yuan-da, WANG Yue, AN Jun-ming, HU Xiong-wei. 1 550 nm long-wavelength vertical-cavity surface emit-ting lasers[J]. 光电子快报（英文版）, 2018, 14(5): 342.
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