发光学报, 2019, 40 (1): 23, 网络出版: 2019-01-19   

类金字塔状GaN微米锥的形貌及发光性能

Morphology and Optical Properties of GaN Micro-pyramid Structure
仝广运 1,2,*贾伟 1,2樊腾 1,2董海亮 1,2李天保 1,2贾志刚 1,2许并社 1,2
作者单位
1 太原理工大学 新材料工程技术研究中心, 山西 太原 030024
2 太原理工大学 界面科学与工程教育部重点实验室, 山西 太原 030024
摘要
三维结构GaN基LED能够解决二维GaN基薄膜LED中存在的量子限制斯塔克效应、效率骤降、发光波长单一等问题。基于此, 本文对三维类金字塔状GaN微米锥的发光性能进行了详细的研究。通过金属有机化合物化学气相沉积原位沉积SiNx掩模层后, 首先制备了底面尺寸为8 μm、高度7.5 μm的类金字塔状GaN微米锥, 之后在其半极性面外延生长了3个周期的InGaN/GaN多量子阱。通过阴极荧光测试发现, 类金字塔状GaN微米锥的半极性面上不同位置发光波长不同; 变功率微区光致发光测试表明, 类金字塔状GaN微米锥的半极性面在InGaN/GaN多量子阱沉积之后极化场较弱; 对InGaN/GaN多量子阱进行了透射电镜表征, 结合阴极荧光光谱的结果最终解释了In原子在类金字塔状GaN微米锥上的迁移机理。利用其半极性面不同位置发光波长不同的结构特点及光学特性, 可以制备多波长发射LED。
Abstract
The recently developed 3D GaN-based light emitting diodes (LEDs) can solve problems associated with typical GaN-based thin film LEDs including the quantum-confined Stark effect, efficiency droop, and monochromatic wavelength. To resolve these issues, the micro-pyramids were synthesized and their luminescence properties were subsequently studied. First, GaN micro-pyramids with a base size of 8 μm and height of 7.5 μm were successfully fabricated after SiNx was deposited in situ by MOCVD, followed by three deposition periods of InGaN/GaN multiple quantum wells on the semi-polar facet of the GaN micro-pyramids. The cathodoluminescence measurements showed that the wavelength of the emission peaks varied on the semi-polar facet of the GaN micro-pyramids. According to micro-photoluminescence measurements obtained using different excitation power densities, the polarization field on the semi-polar facets of the GaN micro-pyramids containing InGaN/GaN multiple quantum wells was rather weak. The atomic migration mechanism was determined from the cathodoluminescence and transmission electron microscopy results. The GaN micro-pyramids can possibly be used for fabricating LEDs with multi-color emission due to their unique structures and optical properties.

仝广运, 贾伟, 樊腾, 董海亮, 李天保, 贾志刚, 许并社. 类金字塔状GaN微米锥的形貌及发光性能[J]. 发光学报, 2019, 40(1): 23. TONG Guang-yun, JIA Wei, FAN Teng, DONG Hai-liang, LI Tian-bao, JIA Zhi-gang, XU Bing-she. Morphology and Optical Properties of GaN Micro-pyramid Structure[J]. Chinese Journal of Luminescence, 2019, 40(1): 23.

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