发光学报, 2019, 40 (1): 82, 网络出版: 2019-01-19   

硒化温度对共溅射法制备的CZTSSe薄膜与电池性能的影响

Influence of Selenization Temperature on Co-sputtered CZTSSe Thin Films and Related Solar Cells
作者单位
1 南京航空航天大学 能源与动力学院, 江苏 南京 210016
2 南京航空航天大学材料科学与技术学院 江苏省能量转换材料与技术重点实验室, 江苏 南京 210016
摘要
采用共溅射法结合后硒化成功制备出CZTSSe薄膜, 主要研究了不同的硒化温度对CZTSSe薄膜与电池性能的影响。分别采用X射线衍射仪、拉曼光谱仪、扫描电子显微镜、紫外-可见-近红外分光光度计、霍尔效应测量仪及数字电源表对不同硒化温度下制备的CZTSSe薄膜的结构、形貌、光电与太阳电池性能进行了表征与分析。结果表明, 当硒化温度为580 ℃时, CZTSSe薄膜的结晶性最好, 薄膜表面均匀致密且其电阻率和载流子浓度达到最小值和最大值, 分别为1.57 Ω·cm和8.2×1017 cm-3, 该硒化温度下制备得到的CZTSSe太阳电池的短路电流和转换效率最高达到30.68 mA/cm2和5.17%。相对于550 ℃和600 ℃硒化温度下的CZTSSe太阳电池, 其光电转换效率分别提高了36%和6%。另外, 随着硒化温度的升高, CZTSSe薄膜在XRD中的(112)峰位和Raman中的A1模式振动峰位都向小衍射角和短波数方向移动, 薄膜的禁带宽度也从1.26 eV减小至1.21 eV。
Abstract
CZTSSe thin films were fabricated by co-sputtering method followed by selenization. The effect of selenization temperature on CZTSSe thin films and its solar cell performance was studied. The structure, morphology, optoelectronic and solar cell performance were characterized by X-ray diffraction, Raman, Scanning electron microscope (SEM), ultraviolet-visible-near infrared (UV-Vis-NIR) spectroscopy, Hall effect measurement and digital source meter, respectively. The crystallinity of CZTSSe thin films showed the best crystallinity when the selenization temperature was 580 ℃ and the film surface was uniform and dense. The resistivity and carrier concentration reached minimum and maximum values of 1.57 Ω·cm and 8.2×1017 cm-3 respectively. The short-circuit current and conversion efficiency of the CZTSSe solar cells prepared at this temperature were up to 30.68 mA/cm2 and 5.17%, respectively. Compared with the solar cells selenized at 550 ℃ and 600 ℃, the conversion efficiency of CZTSSe solar cells selenized at 580 ℃ increased by 36% and 6% respectively. With increasing selenization temperature, the position of the (112) peak in XRD patterns and Raman peaks corresponding to A1 mode systematically shifted to lower diffraction angle and wavenumbers. Meanwhile, the band gap of the films decreased from 1.26 eV to 1.21 eV.

孙孪鸿, 沈鸿烈, 黄护林, 李玉芳, 商慧荣. 硒化温度对共溅射法制备的CZTSSe薄膜与电池性能的影响[J]. 发光学报, 2019, 40(1): 82. SUN Luan-hong, SHEN Hong-lie, HUANG Hu-lin, LI Yu-fang, SHANG Hui-rong. Influence of Selenization Temperature on Co-sputtered CZTSSe Thin Films and Related Solar Cells[J]. Chinese Journal of Luminescence, 2019, 40(1): 82.

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